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Electrical Methods for Mechanical Characterization of Interconnect Thin Films

Published

Author(s)

Robert Keller, Cynthia A. Volkert, Roy H. Geiss, Andrew Slifka, David T. Read, Nicholas Barbosa, Reiner Monig

Abstract

We describe the use of electrical methods for evaluating mechanical reliability and properties of patterned copper and aluminum interconnects on silicon substrates. The approach makes use of controlled Joule heating, which causes thermal strains in the materials system due to differences in thermal expansion between the metal and constraining substrate and passivation. Our efforts concentrate on understanding damage formation in the interconnects and on the development of meaningful test methods. We make use of alternating currents in a frequency range (100 Hz to 10 kHz) that does not lead to electromigration but instead causes extensive thermal fatigue damage and failure in the metal interconnects.
Proceedings Title
Advanced Metallization Conf., Proc.
Volume
21
Conference Dates
September 26-29, 2005
Conference Location
Colorado Springs, CO, USA
Conference Title
Advanced Metallization Conf.

Keywords

aluminum interconnects, copper interconnects, electrical testing, interconnect reliability, mechanical properties, thermal fatigue

Citation

Keller, R. , Volkert, C. , Geiss, R. , Slifka, A. , Read, D. , Barbosa, N. and Monig, R. (2005), Electrical Methods for Mechanical Characterization of Interconnect Thin Films, Advanced Metallization Conf., Proc., Colorado Springs, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=50210 (Accessed June 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 31, 2005, Updated October 12, 2021