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Electronics

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Displaying 501 - 525 of 699

Boltzmann Analysis of Electron Swarm Parameters in CF 4 Using Independently Assessed Electron-Collision Cross Sections

October 1, 1999

Author(s)

M. C. Bordage, P. Segur, Loucas G. Christophorou, James K. Olthoff

Using independently assessed electron-collision cross sections, electron swarm parameters were calculated via the solution of the Boltzmann equation under the hydrodynamic regime. The cross sections used for the calculations were from a previously

New Antenna Positioner Improves NIST's Capabilities

October 1, 1999

Author(s)

G. Kangiser, Dennis G. Camell

Antenna and electric field probe calibration requires precise positioning and movement throughout a known RF field Measurements are usually made in an anechoic chamber. A robotic six axis antenna positioner was needed that would work in this environment at

Accurate Experimental Characterization of On-Chip Interconnects

August 13, 1999

Author(s)

Dylan F. Williams, Uwe A. Hartmut Grabinski

In this paper we examine different approaches to the extraction of frequency dependent line parameters from broadband S-parameter measurements.

Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry

July 1, 1999

Author(s)

Huibin Zhu, Allen R. Hefner Jr., Jih-Sheng Lai

The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like. In this paper, a time domain

Electron Collision Cross Sections Derived from Critically Assessed Data

July 1, 1999

Author(s)

Loucas G. Christophorou, James K. Olthoff

Electron-molecule collisions are among the most fundamental processes in gas discharges. They are also the precursors of the ions and the radicals which drive the etch, cleaning, or deposition processes in plasma reactors. Hence, there is a need for a

Negative Ion-Neutral Reactions in Townsend Discharges

July 1, 1999

Author(s)

James K. Olthoff, MVVS. Rao

Relative intensities and translational ion-flux energy distributions are presented for negative ions sampled from Townsend discharges in O 2, SF 6, and CF 4 for a high range of density reduced electric fields greater than 2 W 10 -18 V m 2 (> 2 kTd). These

Studies of Ion Bombardment in High Density Plasmas Containing CF 4

July 1, 1999

Author(s)

James K. Olthoff, Yicheng Wang

We report ion energy distributions, relative ion intensities, and absolute total ion current densities at the grounded electrode of an inductively coupled Gaseous Electronics Conference radio-frequency reference cell for discharges generated in pure C 4

Analysis of Conducted EMI Emissions from PWM Inverters Based on Empirical Models and Comparative Experiments

June 1, 1999

Author(s)

Huibin Zhu, Jih-Sheng Lai, Yi-hua Tang, Allen R. Hefner Jr., Celia Chen

For the purpose of investigation of electromagnetic interference (EMI) mechanisms in PWM inverters, empirical models and comparative experiments were studied in both time and frequency domains. Models of major circuit components including switching devices

Comparison of Methods for Adapter Characterization

June 1, 1999

Author(s)

James P. Randa, Wojciech Wiatr, Robert L. Billinger

Compensation of Thermal Expansiveness In Plastic DCA-Flip-Chip Assemblies Using A Mechanically Compliant Dielectric

May 3, 1999

Author(s)

Jan Obrzut

Application of a compliant, low modulus dielectric layer between the chip joints (C4) and the carrier can decrease the thermally induced bending and probability of failure. Model analysis and experimental data indicate that the optimal thickness of the

Electron Drift and Attachment in CHF 3 and its Mixtures With Argon

May 1, 1999

Author(s)

Yicheng Wang, Loucas G. Christophorou, James K. Olthoff, J. K. Verbrugge

Measurements are reported of the electron drift velocity, w, in CHF 3 gas and in its mixtures with argon. The E/N dependence of w in the mixtures exhibits regions of distinct negative differential conductivity. A small electron attachment rate constant (-

Ion Energy Distributions in Inductively Coupled Radio-Frequency Discharges in Argon, Nitrogen, Oxygen, Chlorine, and Their Mixtures

May 1, 1999

Author(s)

Yicheng Wang, James K. Olthoff

We report ion energy distributions, relative ion intensities, and absolute total ion current densities at the grounded electrode of an inductively-coupled Gaseous Electronics Conference radio-frequency reference cell for discharges generated in pure argon

Electron Interactions With Cl 2

April 1, 1999

Author(s)

Loucas G. Christophorou, James K. Olthoff

Low energy electron interactions with the Cl 2 molecule are reviewed. Information is synthesized and assessed on the cross sections for total electron scattering, total rotational excitation, total elastic electron scattering, momentum transfer, total

International Comparison of Thermal Noise-Temperature Measurements at 2, 4 and 12 GHz

April 1, 1999

Author(s)

James P. Randa, J. Achkar, F. I. Bucholz, T. Colard, John Rice, D. Schubert, M. Sinclair, G. S. Williams

Ion Energy Distributions and Sheath Voltages in Radio-Frequency-Biased, Inductively Coupled, High-Density Plasma Reactor

April 1, 1999

Author(s)

Mark A. Sobolewski, James K. Olthoff, Yicheng Wang

Kinetic-energy Distributions of Positive and Negative Ions in Townsend Discharges in Oxygen

April 1, 1999

Author(s)

MVVS. Rao, Richard J. Van Brunt, James K. Olthoff

Translational flux-energy distributions of positive and negative ions have been measured at high electric field-to-gas density ratios (E/N) up to 40 x 10 -18 V m 2 (40 kTd) in diffuse, parallel-plate Townsend discharges in oxygen using an ion energy

Multiconductor Transmission-Line Characterization: Representations, Approximations, and Accuracy

April 1, 1999

Author(s)

Dylan F. Williams, Christopher L. Holloway, Janet E. Rogers

This paper investigates a measurement method that characterizes lossy printed multiconductor transmission lines, its accuracy, the choice of measurement representations, and some simple approximations. We illustrate the method with measurements of a pair

Low Energy, Ion-Induced Electron and Ion Emission from Stainless Steel: The Effect of Oxygen Coverage and the Implications for Discharge Modeling

February 1, 1999

Author(s)

S. G. Walton, J. C. Tucek, R. Champion, Yicheng Wang

Absolute yields of electrons and negative ions resulting from positive ions impacting stainless steel have been determined as a function of impact energy for clean and oxygen-covered surfaces. Photoelectron emission has been used to monitor the effect of

The NIST Microwave Power Standards in Waveguide

February 1, 1999

Author(s)

J. W. Allen, Fred R. Clague, N T. Larsen, M. P. Weidman

The National Institute of Standards and Technology (NIST) microwave power standards in waveguide consist of automated microcalorimeters and associated transfer standards. Each transfer standard is a bolometric dc substitution power detector (a thermistor

Ion-Molecule Reactions and Ion Kinetics in DC Townsend Discharges in Dielectric Gases

January 1, 1999

Author(s)

MVVS. Rao, James K. Olthoff

The transport of positive and negative ions plays an important role in the initiation and behavior of discharges in gaseous dielectrics. In many cases, the identities, intensities, and kinetic energies of ions are determined by ion-molecule collisions

Total Electron Scattering Cross Section for Cl 2

January 1, 1999

Author(s)

Gary D. Cooper, Jason E. Sanabia, J. H. Moore, James K. Olthoff, Loucas G. Christophorou

Absolute measurements of the total electron scattering cross section for chlorine, Cl2, are reported for electron energies ranging from .3 eV to 23 eV. The present data are in reasonable agreement with previous measurements of the cross sections for total

Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry

December 31, 1998

Author(s)

Huibin Zhu, Allen R. Hefner Jr., Jih-Sheng Lai

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

December 31, 1998

Author(s)

Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein

The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers

Applications of Electron-Interaction Reference Data to the Semiconductor Industry

December 1, 1998

Author(s)

Loucas G. Christophorou, James K. Olthoff

Many advanced plasma diagnostic techniques and plasma models require fundamental physical data in order to make accurate measurements or predictions. Fundamental electron-interaction data are among the most critical since electron collisions are the

Characterization and Applications of On-Wafer Diode Noise Sources

December 1, 1998

Author(s)

Lawrence P. Dunleavy, James P. Randa, Dave K. Walker, Robert L. Billinger, John Rice

A set of wafer-probeable diode noise source transfer standards are characterized using on-wafer noise-temperature methods developed at the National Institute of Standards and Technology (NIST), Boulder, CO.

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