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Electronics

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Displaying 501 - 525 of 695

Electron Collision Cross Sections Derived from Critically Assessed Data

July 1, 1999
Author(s)
Loucas G. Christophorou, James K. Olthoff
Electron-molecule collisions are among the most fundamental processes in gas discharges. They are also the precursors of the ions and the radicals which drive the etch, cleaning, or deposition processes in plasma reactors. Hence, there is a need for a

Negative Ion-Neutral Reactions in Townsend Discharges

July 1, 1999
Author(s)
James K. Olthoff, MVVS. Rao
Relative intensities and translational ion-flux energy distributions are presented for negative ions sampled from Townsend discharges in O 2, SF 6, and CF 4 for a high range of density reduced electric fields greater than 2 W 10 -18 V m 2 (> 2 kTd). These

Studies of Ion Bombardment in High Density Plasmas Containing CF 4

July 1, 1999
Author(s)
James K. Olthoff, Yicheng Wang
We report ion energy distributions, relative ion intensities, and absolute total ion current densities at the grounded electrode of an inductively coupled Gaseous Electronics Conference radio-frequency reference cell for discharges generated in pure C 4

Electron Drift and Attachment in CHF 3 and its Mixtures With Argon

May 1, 1999
Author(s)
Yicheng Wang, Loucas G. Christophorou, James K. Olthoff, J. K. Verbrugge
Measurements are reported of the electron drift velocity, w, in CHF 3 gas and in its mixtures with argon. The E/N dependence of w in the mixtures exhibits regions of distinct negative differential conductivity. A small electron attachment rate constant (-

Electron Interactions With Cl 2

April 1, 1999
Author(s)
Loucas G. Christophorou, James K. Olthoff
Low energy electron interactions with the Cl 2 molecule are reviewed. Information is synthesized and assessed on the cross sections for total electron scattering, total rotational excitation, total elastic electron scattering, momentum transfer, total

The NIST Microwave Power Standards in Waveguide

February 1, 1999
Author(s)
J. W. Allen, Fred R. Clague, N T. Larsen, M. P. Weidman
The National Institute of Standards and Technology (NIST) microwave power standards in waveguide consist of automated microcalorimeters and associated transfer standards. Each transfer standard is a bolometric dc substitution power detector (a thermistor

Total Electron Scattering Cross Section for Cl 2

January 1, 1999
Author(s)
Gary D. Cooper, Jason E. Sanabia, J. H. Moore, James K. Olthoff, Loucas G. Christophorou
Absolute measurements of the total electron scattering cross section for chlorine, Cl2, are reported for electron energies ranging from .3 eV to 23 eV. The present data are in reasonable agreement with previous measurements of the cross sections for total

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

December 31, 1998
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers

Characterization and Applications of On-Wafer Diode Noise Sources

December 1, 1998
Author(s)
Lawrence P. Dunleavy, James P. Randa, Dave K. Walker, Robert L. Billinger, John Rice
A set of wafer-probeable diode noise source transfer standards are characterized using on-wafer noise-temperature methods developed at the National Institute of Standards and Technology (NIST), Boulder, CO.

Effect of Temperature on Electron Attachment to and Negative Ion States of CCl 2 F 2

November 1, 1998
Author(s)
Yicheng Wang, Loucas G. Christophorou, J. K. Verbrugge
The effect of temperature on electron attachment to dichlorodifluoromethane (CCl 2F 2) has been investigated for temperatures up to 500 K and for mean electron energies from thermal to 1.0 eV using an electron swarm method. The measurements were made in
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