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Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

Published

Author(s)

Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein

Abstract

The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements.  The UIS measurements are made using a unique, automated nondestructive Revers
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 12-16, 1998
Conference Location
St. Louis, MO, USA
Conference Title
IEEE Industry Applications Society (IAS) Annual Meeting

Keywords

automatic tester, avalanche, failure, IGBT, model, RBSOA

Citation

Shen, C. , Hefner Jr., A. , Berning, D. and Bernstein, J. (1998), Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, St. Louis, MO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=3393 (Accessed April 15, 2024)
Created December 30, 1998, Updated October 12, 2021