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Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions
Published
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
Abstract
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 12-16, 1998
Conference Location
St. Louis, MO, USA
Conference Title
IEEE Industry Applications Society (IAS) Annual Meeting
Shen, C.
, Hefner Jr., A.
, Berning, D.
and Bernstein, J.
(1998),
Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, St. Louis, MO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=3393
(Accessed October 17, 2025)