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PUBLICATIONS

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

Published

Author(s)

Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein

Abstract

The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements.  The UIS measurements are made using a unique, automated nondestructive Revers
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 12-16, 1998
Conference Location
St. Louis, MO, USA
Conference Title
IEEE Industry Applications Society (IAS) Annual Meeting
Pub Type
Conferences

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Keywords

automatic tester, avalanche, failure, IGBT, model, RBSOA
Electronics and Advanced communications

Citation

Shen, C. , Hefner Jr., A. , Berning, D. and Bernstein, J. (1998), Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, St. Louis, MO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=3393 (Accessed September 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1998, Updated October 12, 2021