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Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry

Published

Author(s)

Huibin Zhu, Allen R. Hefner Jr., Jih-Sheng Lai

Abstract

The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a time domain refle
Proceedings Title
Proc., 1998 Power Electronics Specialists Conference (PESC'98)
Conference Dates
May 17-22, 1998
Conference Location
Fukuoka, JA
Conference Title
1998 Power Electronics Specialists Conference (PESC'98)

Keywords

IGBT, interconnect characterization, interconnect modeling, reflectometry, time domain

Citation

Zhu, H. , Hefner, A. and Lai, J. (1998), Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry, Proc., 1998 Power Electronics Specialists Conference (PESC'98), Fukuoka, JA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=10048 (Accessed May 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1998, Updated February 19, 2017