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Electronics

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Displaying 476 - 500 of 695

Noise-Source Stability Measurements

May 1, 2000
Author(s)
James P. Randa, L. A. Terrell, Lawrence P. Dunleavy
We report results of stability tests on several noise sources for selected frequencies between 12 and 26.5 GHz. Measurements covered intervals of about 1 week and about 1 year or more. Drifts in noise temperature were typically less than the uncertainty of

Design and Testing of NFRad - A New Noise Measurement System

March 1, 2000
Author(s)
Chriss A. Grosvenor, James P. Randa, Robert L. Billinger
The NIST Noise project has constructed and tested a new, automated, coaxial (GPC-7) radiometer for the measurement of noise sources in the 8-12 GHz frequency band. It is an isolated, total-power radiometer that relies on lookup tables for relevant

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

March 1, 2000
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Reverse

Early Streamer Emission Lightning Protection Systems: An Overview

January 1, 2000
Author(s)
Richard J. Van Brunt, Thomas L. Nelson, Ken L. Stricklett
Early streamer emission (ESE) lightning protection systems are a relatively new approach to the perennial problem of lightining damage, and these systems may hold promise for a more effective protection against lighting. However, the scientific and

Electron Interactions with CF 3 I

January 1, 2000
Author(s)
Loucas G. Christophorou, James K. Olthoff
Low-energy electron collision data for the plasma processing gas CF 3I are sparse. Limited cross section data are available only for total and differential elastic electron scattering, electron-impact ionization, and electron attachment processes. These

Causality and Characteristic Impedance

December 2, 1999
Author(s)
Dylan F. Williams, Bradley K. Alpert
A new causal power-normalized waveguide equivalent-circuit theory fixes both the magnitude and phase of the characteristic impedance of a waveguide.

Ion-Molecule Reactions and Ion Energies in CF 4 Discharges

December 1, 1999
Author(s)
B. Peko, I. V. Dyakov, R. Champion, MVVS. Rao, James K. Olthoff
Absolute cross sections have been measured for reactants typically found in carbon tetrafluoride (CF 4) discharges for collision energies below a few hundred electron volts. The reactions investigated include collision-induced dissociation and dissociative

On-Wafer Measurements of Noise Temperature

December 1, 1999
Author(s)
James P. Randa, Robert L. Billinger
The NIST Noise Project has developed the theoretical formalism and experimental methods for performing accurate noise-temperature measurements on wafer. This report summarizes the theoretical formulation and describes the design, methods, and results of

IGBT Model Validation for Soft-Switching Applications

November 1, 1999
Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that

Characteristic Impedance of Microstrip on Silicon

October 25, 1999
Author(s)
Dylan F. Williams, Bradley K. Alpert
We compare power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon substrates.

Characteristic impedance of microstrip on silicon

October 25, 1999
Author(s)
Dylan F. Williams, Bradley K. Alpert
In this paper, we compare the power-voltage, power-current, and causal definitions of the characteristic impedance of microstrip transmission lines on silicon substrates.

Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device

October 3, 1999
Author(s)
Jih-Sheng Lai, David W. Berning, Allen R. Hefner Jr., Chien-Chung Shen, B M. Song, R Zhou
A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point of

New Antenna Positioner Improves NIST's Capabilities

October 1, 1999
Author(s)
G. Kangiser, Dennis G. Camell
Antenna and electric field probe calibration requires precise positioning and movement throughout a known RF field Measurements are usually made in an anechoic chamber. A robotic six axis antenna positioner was needed that would work in this environment at
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