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4 Amp 4H-SiC JBD Diodes

Published

Author(s)

Ranbir Singh, Sei-Hyung Ryu, M. Palmer, Allen R. Hefner Jr., Jih-Sheng Lai
Proceedings Title
Proc., 2000 International Symposium on Power Semiconductor Devices and ICs
Conference Location
Toulouse, 1, FR

Citation

Singh, R. , Ryu, S. , Palmer, M. , Hefner Jr., A. and Lai, J. (2000), 4 Amp 4H-SiC JBD Diodes, Proc., 2000 International Symposium on Power Semiconductor Devices and ICs, Toulouse, 1, FR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=9146 (Accessed December 9, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 30, 2000, Updated October 12, 2021