Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions

Published

October 5, 1999

Author(s)

B M. Song, Huibin Zhu, Jih-Sheng Lai, Allen R. Hefner Jr.

Abstract

In this paper, switching characteristics of non-punch through (NPT) and punch through (PT) Insulated Gate Bipolar Transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the interaction between the external circuit and the physical IGBT internal model under ZVS operation is evaluated. The effects of the external circuit and the physical IGBT internal model under ZVS operation is evaluated. The effects of the external snubber capacitor on the turn-off tail current are modeled and analyzed with the Saber circuit simulator. The turn-on switching characteristics are evaluated for the study of switching losses. This study provides guidelines for designing IGBTs that are suitable for soft switching and for selection of appropriate snubbing capacitors in soft-switching inverter and converter applications.

Proceedings Title

Proc., IEEE Industry Applications Society (IAS) Annual Meeting

Conference Dates

October 5-7, 1999

Conference Location

Phoenix, AZ, USA

Conference Title

IEEE Transactions on Industry Applications Society

Pub Type

Conferences

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Keywords

IGBT, modeling, non-punch-through, power devices, punch-through, soft switching

Citation

Song, B. , Zhu, H. , Lai, J. and Hefner Jr., A. (1999), Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Phoenix, AZ, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30165 (Accessed December 13, 2024)