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MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching

Published

Author(s)

Stephen B. Bayne, W. M. Portnoy, G. J. Rohwein, Allen R. Hefner Jr.
Citation
IEEE Transactions on Power Electronics
Volume
16

Citation

Bayne, S. , Portnoy, W. , Rohwein, G. and Hefner Jr., A. (2000), MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching, IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=17444 (Accessed December 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1999, Updated October 12, 2021