Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Conferences

X-Ray Metrology by Diffraction and Reflectivity

Author(s)
D K. Bowen, R Deslattes
X-ray methods can provide measurements that, for certain parameters of great technological importance, are the most accurate and sensitive available. Their

AlGaN Schottky Diodes for Short-Wavelength UV Applications

Author(s)
P P. Chow, J J. Klaassen, Robert E. Vest, J M. VanHove, A Wowchak, C Polley
High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy (MBE). The realized AlGaN Schottky detectors

Quantum Gates Using Motional States in an Optical Lattice

Author(s)
E Charron, Eite Tiesinga, F H. Mies, Carl J. Williams
We Study an implementation of a two-qubit universal quantum gate with neutral 87Rb atoms trapped in a far-detuned two-color optical lattice. The qubit states

High Performance Transition-Edge-Sensor Based Detectors

Author(s)
Gene C. Hilton, Steven Deiker, Kent D. Irwin, Sae Woo Nam, John M. Martinis, David A. Wollman
High performance detectors utilizing transition-edge sensors (TES) have been demonstrated for photon energies ranging from the infrared to the x-ray. In the

Broadband Josephson Voltage Standards

Author(s)
Clark A. Hamilton, Samuel P. Benz
A Josephson junction is a perfect frequency to voltage converter, that is, V=f/K j where K j = 483597.9 GHz/V. This unique property has been used to convert a

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain

Compressive Strengthening of Sapphire by Neutron Irradiation

Author(s)
T M. Regan, D C. Harris, R M. Stroud, J R. White, D W. Blodgett, K C. Baldwin, J A. Miragliotta, M E. Thomas, M J. Linevsky, J W. Giles, T A. Kennedy, M Fatemi, David R. Black
Neutron irradiation of sapphire with 1 1022(=1 MeV)/m2 increases the c-axis compressive strength by a factor of 3 at 600 C. The mechanism of strength

Sensor Networking and Interface Standardization

Author(s)
Kang B. Lee
Sensors are used in various industries, ranging from aerospace, automotive, biomedicine, building, industrial automation, manufacturing, and process control to

Large Anisotropy Via Oblique Sputtering of Ta Underlayers

Author(s)
John E. Bonevich, Robert D. McMichael, Chang H. Lee, P J. Chen, W Wyatt Miller, William F. Egelhoff Jr.
Anisotropy fields in excess of 120 KA/m (1500 Oe) have been produced in 3 nm to 5 nm thick polycrystalline films of Co by oblique sputtering of Ta underlayers

Luminous Flux Calibrations of LEDs at NIST

Author(s)
Carl C. Miller, Yoshihiro Ohno
The total luminous flux (lumen) is one of the most important characteristics of Light Emitting Diodes (LEDs), and is commonly measured using integrating sphere
Was this page helpful?