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Conferences

X-Ray Metrology by Diffraction and Reflectivity

Author(s)
D K. Bowen, R Deslattes
X-ray methods can provide measurements that, for certain parameters of great technological importance, are the most accurate and sensitive available. Their

AlGaN Schottky Diodes for Short-Wavelength UV Applications

Author(s)
P P. Chow, J J. Klaassen, Robert E. Vest, J M. VanHove, A Wowchak, C Polley
High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy (MBE). The realized AlGaN Schottky detectors

Quantum Gates Using Motional States in an Optical Lattice

Author(s)
E Charron, Eite Tiesinga, F H. Mies, Carl J. Williams
We Study an implementation of a two-qubit universal quantum gate with neutral 87Rb atoms trapped in a far-detuned two-color optical lattice. The qubit states

High Performance Transition-Edge-Sensor Based Detectors

Author(s)
Gene C. Hilton, Steven Deiker, Kent D. Irwin, Sae Woo Nam, John M. Martinis, David A. Wollman
High performance detectors utilizing transition-edge sensors (TES) have been demonstrated for photon energies ranging from the infrared to the x-ray. In the

Broadband Josephson Voltage Standards

Author(s)
Clark A. Hamilton, Samuel P. Benz
A Josephson junction is a perfect frequency to voltage converter, that is, V=f/K j where K j = 483597.9 GHz/V. This unique property has been used to convert a

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain

Compressive Strengthening of Sapphire by Neutron Irradiation

Author(s)
T M. Regan, D C. Harris, R M. Stroud, J R. White, D W. Blodgett, K C. Baldwin, J A. Miragliotta, M E. Thomas, M J. Linevsky, J W. Giles, T A. Kennedy, M Fatemi, David R. Black
Neutron irradiation of sapphire with 1 1022(=1 MeV)/m2 increases the c-axis compressive strength by a factor of 3 at 600 C. The mechanism of strength

The Impact-Echo Method: An Overview

Author(s)
Nicholas J. Carino
The impact-echo method is a technique for flaw detection in concrete. It is based on monitoring the surface motion resulting from a short-duration mechanical

The Maturity Method: From Theory to Application

Author(s)
Nicholas J. Carino, Hai S. Lew
The maturity method is a technique to account for the combined effects of time and temperature on the strength development of concrete. The method provides a

The Electronic Kilogram

Author(s)
Michael H. Kelley
The kilogram is the only remaining base unit in the International System of Units (SI) whose definition is based on a single physical artifact rather than on

A New Stable Speed Test Apparatus for Milling

Author(s)
J P. Snyder, Jon R. Pratt, Matthew A. Davies, S J. Smith
This paper describes a new device that uses a non-contact force actuator in conjunction with spindle rotation to produce an impulsive periodic driving force on

Sensor Networking and Interface Standardization

Author(s)
Kang B. Lee
Sensors are used in various industries, ranging from aerospace, automotive, biomedicine, building, industrial automation, manufacturing, and process control to

Large Anisotropy Via Oblique Sputtering of Ta Underlayers

Author(s)
John E. Bonevich, Robert D. McMichael, Chang H. Lee, P J. Chen, W Wyatt Miller, William F. Egelhoff Jr.
Anisotropy fields in excess of 120 KA/m (1500 Oe) have been produced in 3 nm to 5 nm thick polycrystalline films of Co by oblique sputtering of Ta underlayers
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