AlGaN Schottky Diodes for Short-Wavelength UV Applications

Published

June 1, 2001

Author(s)

P P. Chow, J J. Klaassen, Robert E. Vest, J M. VanHove, A Wowchak, C Polley

Abstract

High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy (MBE). The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohns for 0.5 mm² active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from <1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.

Proceedings Title

Photodetectors: Materials and devices, Conference | 6th | Photodectors: Materials and Devices VI | SPIE

Conference Dates

January 1, 2001

Conference Location

Undefined

Conference Title

Proceedings of SPIE--the International Society for Optical Engineering

Pub Type

Conferences

Keywords

aluminum gallium nitride, Schottky diode, ultraviolet detectors

Citation

Chow, P. , Klaassen, J. , Vest, R. , VanHove, J. , Wowchak, A. and Polley, C. (2001), AlGaN Schottky Diodes for Short-Wavelength UV Applications, Photodetectors: Materials and devices, Conference | 6th | Photodectors: Materials and Devices VI | SPIE, Undefined (Accessed October 14, 2025)