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Search Publications by: Sergiy Krylyuk (Fed)

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Displaying 51 - 75 of 75

Identification of the Crystal Symmetry in 1T' MoTe2 with Polarization-Resolved Second Harmonic Generation and Raman Scattering

October 13, 2016
Author(s)
Ryan Beams, Luiz Gustavo Cancado, Sergiy Krylyuk, Irina Kalish, Berc Kalanyan, Arunima Singh, Kamal Choudhary, Patrick Vora, Francesca M. Tavazza, Albert Davydov, Stephan J. Stranick
We study the crystal symmetry properties of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is know to be inversion symmetric, however, we nd that the inversion symmetry is

Phonon Anharmonicity in Bulk Td-MoTe2

July 18, 2016
Author(s)
Albert Davydov, Sergiy Krylyuk, Irina Kalish, Ryan Beams, Patrick Vora
We examine anharmonic contributions to the optical phonon frequency in bulk Td-MoTe2 phase through temperature-dependent Raman spectroscopy. At temperatures greater than 100 K we find that the optical phonon modes redshift linearly with temperature in

Near-theoretical fracture strengths in native and oxidized silicon nanowires

June 21, 2016
Author(s)
Frank W. DelRio, Ryan M. White, Sergiy Krylyuk, Albert Davydov, Lawrence H. Friedman, Robert F. Cook
In this letter, fracture strengths σf of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σf in the Si was comparable to the

Near-field microwave microscopy of one-dimensional nanostructures

May 23, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Rebecca C. Quardokus, Frank W. DelRio, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Sergiy Krylyuk, Albert Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si (111)

May 15, 2016
Author(s)
Sergiy Krylyuk, Marcus Muller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Ratan K. Debnath, Jong Yoon Ha, Baomei Wen, Paul T. Blanchard, Alexana Roshko, Abhishek Motayed, Matthew R. King, Albert Davydov, Jurgen Christen
Large arrays of GaN core-shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal-organic vapor phase epitaxy

Faceting Control in Core/Shell GaN micropillars using Selective Epitaxy

October 15, 2014
Author(s)
Sergiy Krylyuk, Heayoung Yoon, Baomei Wen, Abhishek Motayed, Albert Davydov, Matt N. King
We report on fabricating large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consisted of inductively coupled plasma (ICP) etch of lithographically patterned n-type GaN substrate followed by selective growth of

Miniature all-solid-state heterostructure nanowire Li-ion batteries as a tool for engineering and structural diagnostics of nanoscale electrochemical processes.

August 15, 2014
Author(s)
Vladimir P. Oleshko, Thomas F. Lam, Dmitry A. Ruzmetov, Paul M. Haney, Henri J. Lezec, Albert Davydov, Sergiy Krylyuk, John Cumings, Albert A. Talin
Complex interfacial phenomena and phase transformations that govern the operation of Li-ion batteries (LiBs) require detailed nanoscale 3D structural and compositional characterization that can be directly related to the capacity and electrical transport

Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Emerging Applications.

October 2, 2013
Author(s)
Vladimir P. Oleshko, Elissa H. Williams, Albert Davydov, Sergiy Krylyuk, Abhishek Motayed, Dmitry A. Ruzmetov, Thomas F. Lam, Henri J. Lezec, Albert A. Talin
Functionalized individual semiconductor nanowires (SNWs) and 3D SNW arrays attract a continuously growing interest for applications in optoelectronics, sensing, and energy storage. High-resolution field-emission analytical (S)TEM enables critical insights

Selective Streptavidin Bioconjugation on Si and SiC nanowires for Biosensor Applications.

January 14, 2013
Author(s)
Elissa H. Williams, John A. Schreifels, Mulpuri V. Rao, Albert Davydov, Vladimir P. Oleshko, Nancy J. Lin, Kristen L. Steffens, Sergiy Krylyuk, Kristine A. Bertness, Amy Manocchi, Yaroslav Koshka
A functionalization method for the specific and selective immobilization of the streptavidin (SA) protein on semiconductor nanowires (NWs) was developed. Silicon (Si) and silicon carbide (SiC) NWs were functionalized with 3-aminopropyltriethoxysilane

Selective Streptavidin Bioconjugation on Si, SiC, and GaN Nanowires for Biosensor Applications.

October 19, 2012
Author(s)
Elissa H. Williams, John A. Schreifels, Mulpuri V. Rao, Albert Davydov, Vladimir Oleshko, Nancy Lin, Kristen L. Steffens, Sergiy Krylyuk, Kristine A. Bertness, Amy Manocchi, Yaroslav Koshka
A functionalization method for the specific and selective immobilization of the streptavidin (SA) protein on semiconductor nanowires (NWs) was developed. Silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) NWs were functionalized with 3

In Situ Atomic Scale Imaging of Electrochemical Lithiation of Silicon

October 7, 2012
Author(s)
Xiao Hua Liu, Sergiy Krylyuk, Albert Davydov, Jian Yu Huang
In lithium-ion batteries, the electrochemical reaction between the electrodes and lithium is a critical process that controls the capacity, cyclability and reliability of the battery. Despite intensive study, the atomistic mechanism of the electrochemical

Ultimate bending strength of Si nanowires

April 11, 2012
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20 nm to 60 nm range

Electrolyte stability determines scaling limits for solid-state 3D Li-ion batteries

December 20, 2011
Author(s)
Dmitry A. Ruzmetov, Vladimir P. Oleshko, Paul M. Haney, Henri J. Lezec, K Karki, K Baloch, Amit K. Agrawal, Albert Davydov, Sergiy Krylyuk, Y Liu, JY Huang, Mihaela M. Tanase, John Cumings, Albert A. Talin
Rechargeable, all-solid state Li-ion batteries (LIBs) with high specific capacity and small footprint are highly desirable to power an emerging class of miniature, autonomous microsystems that operate without a hardwire for power or communications. A

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

December 15, 2010
Author(s)
Sergiy Krylyuk, Albert Davydov, Igor Levin
Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si

Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

March 23, 2010
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook
Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the