Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy

Published

February 2, 2012

Author(s)

Gheorghe NMN Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook

Abstract

In this work, the ultimate bending strengths of as-grown Si and fully oxidized Si nanowires were investigated by using a new atomic force microscopy (AFM) bending method. Nanowires dispersed on Si substrates were bent into hook and loop configurations by AFM manipulation. The adhesion between nanowires and the substrate provided sufficient restraint to retain a NW in an imposed bent state and allow subsequent AFM imaging. The stress and friction force distributions along the bent nanowires were calculated based on the in-plane configurations of the nanowires in the AFM images. As revealed from the last achieved bending state, prior to fracture, fracture strengths close to the ideal strength of materials were attained in these measurements: 17.3 GPa for Si nanowires and 6.2 GPa for fully oxidized Si nanowires.

Citation

Journal of Materials Research

Volume

27

Issue

3

Pub Type

Journals

Download Paper

DOI Link

Keywords

nanostructure, strength, scanning probe microscopy

Citation

, G. , Krylyuk, S. , Davydov, A. and Cook, R. (2012), Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy, Journal of Materials Research, [online], https://doi.org/10.1557/jmr.2011.354 (Accessed April 19, 2024)