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Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

Published

Author(s)

Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook

Abstract

Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their diameter. From contact-resonance atomic force microscopy measurements, the effect of the compressive stress at the Si-SiO\(_2\) interface was revealed in the diameter dependence of the elastic modulus of Si nanowires oxidized at 900 (^\circ\)C and 1000 \(^\circ\)C. A modified core-shell model that includes the interface stress developed during oxidation captures the diameter dependence observed in the measured elastic moduli of these oxidized Si nanowires. The values of strain and stress as well as the width of the stressed transition region at the Si-SiO\(_2\) interface agree with those reported in simulations and experiments.
Citation
Nano Letters
Volume
10

Keywords

contact resonance, atomic force microscopy, nanoscale mechanical properties, Si nanowires

Citation

Stan, G. , Krylyuk, S. , Davydov, A. and Cook, R. (2010), Compressive stress effect on the radial elastic modulus of oxidized Si nanowires, Nano Letters (Accessed March 5, 2024)
Created March 23, 2010, Updated February 19, 2017