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Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Emerging Applications.

Published

Author(s)

Vladimir P. Oleshko, Elissa H. Williams, Albert Davydov, Sergiy Krylyuk, Abhishek Motayed, Dmitry A. Ruzmetov, Thomas F. Lam, Henri J. Lezec, Albert A. Talin

Abstract

Functionalized individual semiconductor nanowires (SNWs) and 3D SNW arrays attract a continuously growing interest for applications in optoelectronics, sensing, and energy storage. High-resolution field-emission analytical (S)TEM enables critical insights into the morphology, crystalline and electronic structures and chemical compositions of single-crystalline high-aspect-ratio SNWs as perspective building blocks suitable for both a large scale-up synthesis and fabrication. Furthermore, SNW-based lab-on-a-chip devices may allow direct correlation between functional properties tailored for specific performance with the heterostructure morphology and atomic arrangement of the nanoscale structure being analyzed in various (S)TEM modes.
Citation
Journal of Physics Conference Proceedings
Volume
012017
Issue
471

Citation

Oleshko, V. , Williams, E. , Davydov, A. , Krylyuk, S. , Motayed, A. , Ruzmetov, D. , Lam, T. , Lezec, H. and Talin, A. (2013), Analytical Electron Microscopy of Semiconductor Nanowire Functional Materials and Devices for Emerging Applications., Journal of Physics Conference Proceedings, [online], https://doi.org/10.1088/1742-6596/471/1/012017 (Accessed December 7, 2024)

Issues

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Created October 2, 2013, Updated November 10, 2018