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Ultimate bending strength of Si nanowires

Published

Author(s)

Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook

Abstract

Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20 nm to 60 nm range were investigated by using a new bending protocol. Nanowires simply held by adhesion on flat substrates were bent through sequential atomic force microscopy manipulations. The bending states prior to failure were analyzed in great detail to measure the bending dynamics and the ultimate fracture strength of the investigated nanowires. An increase in the fracture strengths from 12 GPa to 18 GPa was observed as the radius of nanowires was decreased from 60 nm to 20 nm. The large values of the fracture strength of these nanowires, although comparable with the ideal strength of Si, are explained in terms of the surface morphology of the nanowires.
Citation
Nano Letters

Keywords

fracture strength, Si nanowires, atomic force microscopy

Citation

Stan, G. , Krylyuk, S. , Davydov, A. , Levin, I. and Cook, R. (2012), Ultimate bending strength of Si nanowires, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910821 (Accessed February 26, 2024)
Created April 11, 2012, Updated February 19, 2017