Motayed, A.
, Krylyuk, S.
and Davydov, A.
(2011),
Characterization of Deep-Levels in Silicon Nanowires by Low-Frequency Noise Spectroscopy, Applied Physics Letters
(Accessed April 2, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of Deep-Levels in Silicon Nanowires by Low-Frequency Noise Spectroscopy
Published
Author(s)
, ,
Abstract
We have used low-frequency noise (LFN) spectroscopy to measure generation-recombination (G-R) centers in boron-doped silicon nanowires (SiNWs), which were grown using vapor-liquid-solid technique with Au catalyst. Drain current noise power spectral density was measured for SiNW back-gated field-effect transistors from 320 K to 100 K. The LFN spectra showed distinct Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap. From the temperature-dependent LFN measurement we clearly identified a single deep level at 0.39 eV from the bandedge. Estimated electron and hole capture cross-sections were 9.5 ×10-17 cm2 and 1.4 ×10-16 cm2, respectively and trap concentration of 2.0 ×1012 cm-3. This study demonstrates the potential of the LFN spectroscopy in characterization of deep-levels in nanowires in general.Citation
Applied Physics Letters
Volume
99
Pub Type
Journals
Keywords
Au Deep Levels, Capture Cross-Sections, Generation-Recombination Centers, Low-Frequency Noise, Silicon Nanowire FET
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created September 12, 2011, Updated October 12, 2021