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Large-Area GaN n-p Core-Shell Arrays Fabricated Using Top-Down Etching and Selective Epitaxial Overgrowth

Published

Author(s)

Abhishek Motayed, Sergiy Krylyuk, Dipak Paramanik, Matt N. King, Jong Yoon Ha, Albert Davydov, John E. Bonevich

Abstract

We present large-area, vertically-aligned GaN core-shell structures on silicon substrates. The GaN cores were formed by inductively coupled plasma etching of patterned n-type GaN epitaxial layer. The Mg-doped GaN shells were formed using selective overgrowth by halide vapor phase epitaxy. The diameter of the cores ranged from 250 nm to 10 um with varying pitch. The p-type shells formed truncated hexagonal pyramids with prismatic [1101] side-facets. Room-temperature photoluminescence, and Raman scattering measurements indicated strain-relaxation in the etched cores and shells. Cross-sectional transmission electron microscopy revealed dislocation bending by 90 degrees in the shells, which led to their reduction in the overgrown shells.
Citation
Journal of Applied Physics
Volume
101
Issue
24

Keywords

Core-shell, GaN, nanostructures, p-n junction, top-down

Citation

Motayed, A. , Krylyuk, S. , Paramanik, D. , King, M. , , J. , Davydov, A. and Bonevich, J. (2012), Large-Area GaN n-p Core-Shell Arrays Fabricated Using Top-Down Etching and Selective Epitaxial Overgrowth, Journal of Applied Physics (Accessed July 6, 2022)
Created December 10, 2012, Updated February 19, 2017