Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

Published

March 31, 2015

Author(s)

Peng Zhang, Pei Liu, A. Zaslavsky, D. Pacifici, Jong Y. Ha, Sergiy Krylyuk, Albert Davydov

Abstract

We report on the fabrication and photovoltaic characteristics of vapor-liquid-solid (VLS) grown vertical arrays of silicon axial p-i-n oxide-passivated nanowire (NW) solar cells with NW diameter of 140 nm. Dark and light current-voltage measurements were performed under the standard air mass (AM) 1.5 global (G) illumination. Surface passivation is shown to enhance open-circuit voltage (V_(OC)), short-circuit current density (J_(SC)) and fill factor (FF), with measured internal quantum efficiency of 3% over the 400 nm -1000 nm spectral range. Measured specular and total reflectance values of 6% and 20%, respectively, indicate strong light scattering and absorption by the NW arrays. The photovoltaic performance of passivated individual NWs was compared to array performance under 532 nm laser illumination with power density of 10 W/cm^(2). Higher values of V_(OC) and FF in the arrays are explained by enhanced light trapping in the NW arrays.

Citation

Journal of Applied Physics

Volume

117

Pub Type

Journals

Citation

Zhang, P. , Liu, P. , Zaslavsky, A. , Pacifici, D. , Ha, J. , Krylyuk, S. and Davydov, A. (2015), Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications, Journal of Applied Physics (Accessed February 19, 2025)