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Search Publications by: Curt A. Richter (Fed)

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Displaying 226 - 242 of 242

Spectroscopic Ellipsometry of Ta 2 0 5 On Si, in Ultrathin SiO 2 and High-K Materials for ULSI Gate Dielectrics, edited by H. R. Huff, C. A. Richter, M. L. Green, G. Lucovsky, and T. Hattori

September 1, 1999
Author(s)
Curt A. Richter, Nhan Van Nguyen, G A. Alers
In this paper, we present the results of spectroscopic ellipsometry (SE) studies of Ta 20 5 films on Si. Based on these results, we have experimentally determined an effective method for analyzing SE measurements of Ta 20 5. A set of CVD-grown Ta 20 5

The Future of Gate Dielectrics Considered

July 1, 1999
Author(s)
Curt A. Richter
Symposium R, Ultrathin SiO 2 and High-K Materials for ULSI Gate Dielectrics, provided a large (20 invited speakers and more than 100 total presentations) and exciting overviews of many possible solutions for technologically critical issues associated with

Preface to Materials Research Society 1999 Proceedings

April 5, 1999
Author(s)
H. R. Huff, Curt A. Richter, M. L. Green, G. Lucovsky
This Materials research society Proceedings contains 81 papers presented at the Ultrathin SiO 2 and High-K Materials for gate Dielectrics Symposium, held April 5-9, 1999, in San Francisco. The symposium was truly international with 34 of the 81 published
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