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Preface to Materials Research Society 1999 Proceedings

Published

Author(s)

H. R. Huff, Curt A. Richter, M. L. Green, G. Lucovsky

Abstract

This Materials research society Proceedings contains 81 papers presented at the Ultrathin SiO2 and High-K Materials for gate Dielectrics Symposium, held April 5-9, 1999, in San Francisco. The symposium was truly international with 34 of the 81 published papers from countries other than the United States. Furthermore, 60 of the 81 contributions are from universities and national research institutes, testifying to the continuing recognition of the complexity and the incredibly stimulating scientific and engineering challenges that the MOSFET dielectric material brings to the microelectronics industry.
Proceedings Title
1999 Materials Research Society Symposium proceedings, Ultrathin SiO^d2^ and High-K Materials for Gate Dielectrics
Conference Dates
April 5-9, 1999
Conference Location
San Francisco, CA, USA
Conference Title
Materials Research Society Symposium

Keywords

ellipsometry, optical constants, pentoxide, spectroscopic, Ta<sub>2</sub>O<sub>5</sub>, tantalum, integrated circuit industry, MOSFET dielectric material, microelectronics

Citation

Huff, H. , Richter, C. , Green, M. and Lucovsky, G. (1999), Preface to Materials Research Society 1999 Proceedings, 1999 Materials Research Society Symposium proceedings, Ultrathin SiO^d2^ and High-K Materials for Gate Dielectrics, San Francisco, CA, USA (Accessed April 23, 2024)
Created April 4, 1999, Updated October 12, 2021