Symposium R, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, provided a large (20 invited speakers and more than 100 total presentations) and exciting overviews of many possible solutions for technologically critical issues associated with present-day and near-future MOS gate dielectrics. Topical sessions were held on a range of subjects including atomic scale control of the dielectric/Si interface, advances in ultrathin oxides and oxynitrides, high-k alternate gate dielectrics, and a joint session (with Symposium M) on the reliability of ultrathin gate dielectrics.
ULSI gate dielectrics, MOS gate dielectrics, dielectric/Si interface, ultrathin oxides and oxynitrides, high-k alternate gate dielectrics, ultrathin gate dielectrics
The Future of Gate Dielectrics Considered, MRS Bulletin
(Accessed December 9, 2023)