Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators



Curt A. Richter, Allen R. Hefner Jr., Eric M. Vogel


We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done.
IEEE Electron Device Letters


capacitance, effective, oxide thickness, gate dielectric, MOS devices, polysilicon depletion, inversion quantization


Richter, C. , Hefner Jr., A. and Vogel, E. (2001), A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators, IEEE Electron Device Letters, [online], (Accessed July 20, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created December 31, 2000, Updated October 12, 2021