Publications

Displaying 76 - 100 of 276

Superconformal Bottom-Up Gold Deposition in High Aspect Ratio Through Silicon Vias

April 14, 2017

Author(s)

Daniel Josell, Thomas P. Moffat

This work presents superconformal, bottom-up Au filling of high aspect ratio Through Silicon Vias (TSVs) along with a predictive framework based on the coupling of suppression breakdown and surface topography. The work extends a previous study of

Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias

November 11, 2016

Author(s)

Daniel Josell, Thomas P. Moffat, Manoj R. Silva

This work demonstrates and models controlled bottom-up Co filling of Through Silicon Vias (TSVs) based on the coupling of suppression breakdown and surface topography. Deposition was performed in a CoSO4 + CoCl2 + H3BO3 electrolyte with a branched

Mechanical/Structural Properties of the Key Thin Film Materials Ag, Cu & Ni for Electronics Applications

September 23, 2016

Author(s)

Daniel Josell, Yousuf Mohammed, Helmut Baumgart, Abdelmageed Elmustafa

Metallic films of Ag, Cu, and Ni each of 150, 300, 600 and 1000 nm thick were deposited on Si using an electron-beam evaporation (e-beam) deposition system. A shutter was used to successively cover increments of 1" (2.54 cm) of the wafer at a time

Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias

September 23, 2016

Author(s)

Daniel Josell, Manoj R. Silva, Thomas P. Moffat

This work demonstrates void-free cobalt filling of 56 um tall, annual Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte

Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias

September 23, 2016

Author(s)

Daniel Josell, Thomas P. Moffat

Abstract: This work demonstrates void-free nickel filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled superconformal, void-free deposition. The

The Suppression Breakdown induced S-NDR Mechanism for Defect-Free Filling of High Aspect Ratio Features

September 23, 2016

Author(s)

Daniel Josell, Thomas P. Moffat

Superconformal electrodeposition in Through Silicon Vias for multiple metal systems is summarized and shown to be explained by models based on suppressor-induced, S-shaped negative differential resistance (S-NDR). Just published results for superconformal

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J-V, EQE and Photocurrent Mapping

August 26, 2016

Author(s)

Daniel Josell, Ratan K. Debnath, Jong Yoon Ha, Jonathan E. Guyer, Nhan V. Nguyen, M. A. Sahiner, C Reehil, W. A. Manners

This paper presents a study of windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic cells are fabricated upon two interdigitated comb electrodes pre-patterned at micrometer length

Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias

April 30, 2016

Author(s)

Daniel Josell, Thomas P. Moffat

This work demonstrates controlled bottom-up nickel filling of Through Silicon Vias based on the coupling of suppression breakdown and surface topography. Deposition was performed in a NiSO4 + NiCl2 + H3BO3 electrolyte with a branched polyethyleneimine

Morphological transitions during Au electrodeposition: from porous to compact films and nanowires

August 28, 2015

Author(s)

Daniel Josell, Igor Levin, Thomas P. Moffat

Gold electrodeposition was studied in a sulfite electrolyte to which micromolar concentrations of Tl2SO4 were added. Hysteresis and a regime of negative differential resistance (NDR) evident in electroanalytical measurements are correlated with deposit

Heat Transfer Through Nanoscale Multilayered Thermal Barrier Coatings at Elevated Temperatures

August 15, 2015

Author(s)

Daniel Josell, Thao M. Nguyen, John E. Bonevich

Heat transfer through thermal barrier coatings (TBCs) composed of alternating nanometer thick layers of aluminum oxide and 7% yttria stabilized zirconia (7YSZ) was studied by pulsed heating at temperatures in the range 1000 °C to 1100 °C. The thermal

Bottom-up Electrodeposition of Zinc in Through Silicon Vias Using Breakdown of Additive-Derived Suppression

January 12, 2015

Author(s)

Daniel Josell, Thomas P. Moffat

This paper presents superconformal feature filling during zinc electrodeposition in a sulfate electrolyte. Localized bottom-up filling of Through Silicon Vias (TSVs) with no deposition on the sidewalls or the field around them is presented in electrolytes

Superconformal Cu Electrodeposition from Cu(II)-EDTA Complexed Alkaline Electrolyte

July 26, 2014

Author(s)

Daniel Josell, Thomas P. Moffat

This paper details superconformal filling of submicrometer trenches with bright, dense copper from alkaline cupric ethylenediaminetetraacetic acid (EDTA) electrolyte of pH 12. Enhanced deposition from the bottom corners of the trenches and overfill bumps

Superconformal Copper Electrodeposition in Complexed Alkaline Electrolyte

April 3, 2014

Author(s)

Daniel Josell, Thomas P. Moffat

This paper examines superconformal filling of trenches during copper electrodeposition from alkaline cupric tartrate electrolyte. Extreme bottom-up filling of submicrometer damascene trenches with minimal deposition on the sidewalls and the field around

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