Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Daniel Josell (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 142

Superconformal Copper Electrodeposition in Complexed Alkaline Electrolyte

April 3, 2014
Author(s)
Daniel Josell, Thomas P. Moffat
This paper examines superconformal filling of trenches during copper electrodeposition from alkaline cupric tartrate electrolyte. Extreme bottom-up filling of submicrometer damascene trenches with minimal deposition on the sidewalls and the field around

Forward Issue on Electrochemical Processing of Interconnects

December 10, 2013
Author(s)
Thomas P. Moffat, Daniel Josell
On-going densification of microelectronics has driven the development of cost effective and reliable processes for fabricating circuitry ranging from nanometer scale trenches and vias for on-chip interconnects to micrometer scale through-silicon-vias (TSV)

Spatial-Temporal Modeling of Extreme Bottom-Up Filling of Through-Silicon-Vias

December 6, 2013
Author(s)
Daniel Wheeler, Thomas P. Moffat, Daniel Josell
Extreme bottom-up superfilling of annular through-silicon-vias (TSV) during copper electrodeposition has been reported wherein metal deposits on the bottom surface of the TSV with negligible deposition on its sidewalls or the field around it. The growth

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells

August 22, 2013
Author(s)
Carlos M. Hangarter, Ratan K. Debnath, Jong Y. Ha, M. E. Sahiner, C. J. Reehil, W. A. Manners, Daniel Josell
This paper details the use of scanning photocurrent microscopy to examine localized current collection efficiency of thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The devices are based upon two interdigitated comb

Superfilling Damascene Trenches with Gold in Sulfite Electrolyte

April 24, 2013
Author(s)
Daniel Josell, Thomas P. Moffat
Superconformal Au deposition is demonstrated in a Na_(3)Au(SO_(3))_(2 -) Na_(2)SO-(3) based electrolyte using underpotential deposited (upd) Pb to catalyze the reduction of Au(SO_(3))_(2)^(3-). Micromolar additions of Pb^(2+) to the electrolyte give rise

Backcontact CdSe/CdTE Windowless Solar Cells

February 1, 2013
Author(s)
Donguk Kim, Carlos M. Hangarter, Ratan K. Debnath, Jong Y. Ha, Carlos R. Beauchamp, Matthew D. Widstrom, Jonathan E. Guyer, Nhan Van Nguyen, B. Y. Yoo, Daniel Josell
This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves cadmium selenide electrodeposition on one of two interdigitated electrodes on a pre-patterned

Modeling Extreme Bottom-Up Filling of Through Silicon Vias

August 29, 2012
Author(s)
Daniel Josell, Daniel Wheeler, Thomas P. Moffat
Extreme bottom-up superfilling of through silicon vias (TSV) was recently described wherein deposition occurs on the bottom surface of the vias with negligible deposition on their sidewalls or the field around them. The process uses a deposition

Three-Dimensionally Structured CdS/CdTe Photovoltaics on Dual Interdigitated Back-Contacts

April 8, 2011
Author(s)
Carlos M. Hangarter, Behrang Hamadani, Ryan F. Need, Carlos R. Beauchamp, Hua Xu, John E. Bonevich, Nikolai Zhitenev, Daniel Josell
The fabrication and properties of three-dimensionally structured CdS/CdTe solar cells with back-contacts are described. Fabrication entails electrodeposition of CdS at submicrometer length scales on one of two metal electrodes interdigitated in a comb

On the Fracture Behavior of Nano-Layered Coatings Under Tension.

October 29, 2010
Author(s)
Daniel Josell, Herzl Chai
In this work the fracture behavior of a model brittle/ductile (Si/Ag) multilayer evaporated on a thick substrate is studied with the aid of a four-point bending apparatus. The system variables include individual layer thickness (2.5 to 30 nm), total film

Superconformal Electrodeposition for 3-D Interconnects

September 7, 2010
Author(s)
Thomas P. Moffat, Daniel Josell
Electrodeposition is a key fabrication process used in the state-of-the-art multilevel Cu metallization of microelectronic interconnects from transistor to circuit board length scale. Recent electrochemical surface science and feature filling studies have

Three-Dimensionally Structured Thin Film Heterojunction Photovoltaics on Interdigitated Back-Contacts

February 1, 2010
Author(s)
Daniel Josell, Carlos R. Beauchamp, Behrang H. Hamadani, Suyong S. Jung, Jonathan E. Guyer, Abhishek Motayed, Carlos M. Hangarter, Nadine E. Gergel-Hackett, Hua Xu, Nikolai B. Zhitenev
Fabrication and properties of three-dimensionally structured back-contact heterojunction solar cells are described. A variety of devices are explored, all of which were fabricated by electrochemical deposition of a semiconducting material on one of two

3-D Metallization by Damascene Electrodeposition

January 1, 2010
Author(s)
Thomas P. Moffat, Chang H. Lee, Daniel Josell
Electrodeposition is a key fabrication process used in the state-of-the-art multilevel Cu metallization of microelectronic interconnects from transistor to circuit board length scale. Recent electrochemical surface science and feature filling studies have

Three-Dimensionally Structured CdTe Thin Film Photovoltaic Devices with Self-Aligned Back Contacts: Electrodeposition on Interdigitated Electrodes.

June 25, 2009
Author(s)
Daniel Josell, Carlos R. Beauchamp, Suyong S. Jung, Behrang H. Hamadani, Abhishek Motayed, Lee J. Richter, Maureen E. Williams, John E. Bonevich, Alexander J. Shapiro, Nikolai B. Zhitenev, Thomas P. Moffat
Cadmium-telluride photovoltaic cells were deposited on substrates patterned with two interdigitated electrodes. Deposition involved application of different potentials to the two electrodes in order to obtain a 3-d gradient of film properties within the

Infrared emission imaging as a tool for characterization of hydrogen storage materials

December 6, 2008
Author(s)
H. Oguchi, Edwin J. Heilweil, Daniel Josell, Leonid A. Bendersky
Combinatorial thin films provide an opportunity for studying a variety of properties over a wide range of compositions and microstructures on a single substrate, allowing substantial acceleration of both the fabrication and study of materials and their

Control of Overfill Bumps in Damascene Cu Electrodeposition

October 16, 2008
Author(s)
Soo K. Kim, Daniel Wheeler, Daniel Josell, Thomas P. Moffat
Electroanalytical measurements and feature filling experiments have been conducted to study the effect of dodecyltrimethylammonium chloride (DTAC) and branched polyethyleneimine (PEI) on Cu deposition as levelers in the presence of various combinations of

Diffusional Creep: Stresses and Strain Rates in Thin films and Multilayers

October 16, 2008
Author(s)
Daniel Josell, Timothy P. Weihs, H Gao
In this article, we discuss creep deformation as it relates to thin films and multilayer foils. We begin by reviewing experimental techniques for studying creep deformation in thin-film geometries, listing the pros and cons of each; then we discuss the use

Examination of Sn Electrodeposit on a Substrate Not Forming Intermetallic

October 16, 2008
Author(s)
Maureen E. Williams, Kil-Won Moon, William J. Boettinger, Daniel Josell
Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To

Interfacial Free Energies and the Creep of Multilayer Thin Films

October 16, 2008
Author(s)
Daniel Josell, W Carter
Experiments utilizing the creep properties of multilayer thin films to determine underlying free energies are presented with essential theory. A new technique utilizing tubular multilayer foils is then described.
Was this page helpful?