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Search Publications by: Daniel Josell (Fed)

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Displaying 26 - 50 of 139

Exploring the Limits of Bottom-Up Gold Filling to Fabricate Diffraction Gratings

November 27, 2019
Author(s)
Daniel Josell, Stephen J. Ambrozik, Maureen E. Williams, A E. Hollowell, Christian Arrington, Shinichiro Muramoto, Thomas P. Moffat
Gold deposition on rotating disk electrodes, Bi3+ adsorption on planar Au films and superconformal Au filling of trenches up to 45 m deep are examined in Bi+3-containing Na3Au(SO3)2 electrolytes with pH between 9.5 and 11.5. Higher pH is found to increase

Simulation of Copper Electrodeposition in Through-Hole Vias

October 1, 2019
Author(s)
Trevor M. Braun, Daniel Josell, Thomas P. Moffat, Jimmy John
Copper electrodeposition processes for filling metallized through-hole (TH) and through-silicon vias (TSV) depend on selective breakdown of a co-adsorbed polyether-chloride adlayer within the recessed surface features. In this work, a co-adsorption

Accelerated Bottom-up Gold Filling of Trenches

July 12, 2019
Author(s)
Daniel Josell, Maureen E. Williams, Stephen J. Ambrozik, Chen Zhang, Thomas P. Moffat
This work extends previously detailed void-free, bottom-up feature filling in a near-neutral Na3Au(SO3)2 + Na2SO3 electrolyte containing micromolar concentrations of Bi. Bottom-up electrodeposition in 17 m and 45 m tall trenches is demonstrated using

Bottom-up Gold Filling of High Aspect Ratio Trenches

June 19, 2019
Author(s)
Stephen J. Ambrozik, Thomas P. Moffat, Daniel Josell, Chen Zhang, Houxian Miao
This work demonstrates bottom-up superconformal Au filling of trenches as tall as seventeen micrometers. Deposition is conducted in a near-neutral Na3Au(SO3)2 + Na2SO3 electrolyte containing a micromolar concentration of Bi3+, known to accelerate the Au

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

January 18, 2019
Author(s)
Trevor Braun, Daniel Josell, Manoj R. Silva, Thomas P. Moffat
This work examines Cu deposition in low chloride, suppressor containing electrolytes that exhibit a transition from passive to active deposition partway down filling features based on the coupling of suppression breakdown and surface topography. The

Bottom-up Copper Filling of Millimeter Size Through Silicon Vias

January 12, 2019
Author(s)
Daniel Josell, Thomas P. Moffat, Lyle Menk, Andrew Hollowell, M Blain
This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of

Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

November 2, 2018
Author(s)
Daniel Josell, Thomas P. Moffat, L A. Menk, E Baca, M Blain, A Smith, Jason Dominguez, J McClain, P D. Yeh, A E. Hollowell
An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 m deep and nominally 125 m diameter metallized vias were filled with Cu in less than 7 hours under

SEIRAS Study of Chloride Mediated Polyether Adsorption on Cu

August 31, 2018
Author(s)
Thomas P. Moffat, Daniel Josell, Lee J. Richter
Surface enhanced infrared absorption spectroscopy (SEIRAS) was used to examine the co- adsorption of a selection of polyethers with Cl- under conditions relevant to superconformal Cu electrodeposition in CuSO4-H2SO4 electrolytes. In 0.1 mol/L H2SO4 a

Bottom-up Filling of Damascene Trenches with Gold in a Sulfite Electrolyte

August 19, 2018
Author(s)
Daniel Josell, Thomas P. Moffat
Superconformal Au deposition is demonstrated in a Na3Au(SO3)2 + Na2SO3 electrolyte including Bi3+. Micromolar additions of the Bi3+ to the electrolyte catalyze the reduction of Au(SO3)23- based on hysteretic voltammetry and rising chronoamperometric

Superconformal Nickel Deposition in Through Silicon Vias: Experiment and Prediction

May 16, 2018
Author(s)
Trevor Braun, Daniel Josell, Thomas P. Moffat, Hyo Jong Lee, SH Kim
This work examines the filling of Through Silicon Vias (TSV) by Ni deposition from a NiSO4 + NiCl2 + H3BO3 electrolyte containing a branched polyethyleneimine suppressor previously. Feature filling occurs through the coupling of transport limited

Windowless CdSe/CdTe Solar Cells with Differentiated Back Contacts: J-V, EQE and Photocurrent Mapping

August 26, 2016
Author(s)
Daniel Josell, Ratan K. Debnath, Jong Yoon Ha, Jonathan E. Guyer, Nhan V. Nguyen, M. A. Sahiner, C Reehil, W. A. Manners
This paper presents a study of windowless CdSe/CdTe thin film photovoltaic devices with in-plane patterning at a submicrometer length scale. The photovoltaic cells are fabricated upon two interdigitated comb electrodes pre-patterned at micrometer length