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Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias

Published

Author(s)

Daniel Josell, Manoj R. Silva, Thomas P. Moffat

Abstract

This work demonstrates void-free cobalt filling of 56 um tall, annual Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-NDR mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.
Citation
ECS Transactions

Keywords

cobalt, superfill, superconformal, TSV, through silicon via

Citation

Josell, D. , Silva, M. and Moffat, T. (2016), Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias, ECS Transactions (Accessed February 21, 2024)
Created September 23, 2016, Updated April 20, 2017