Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias

Published

Author(s)

Daniel Josell, Manoj R. Silva, Thomas P. Moffat

Abstract

This work demonstrates void-free cobalt filling of 56 um tall, annual Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-NDR mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.
Citation
ECS Transactions

Keywords

cobalt, superfill, superconformal, TSV, through silicon via

Citation

Josell, D. , Silva, M. and Moffat, T. (2016), Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias, ECS Transactions (Accessed July 20, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 23, 2016, Updated April 20, 2017