Josell, D.
, Silva, M.
and Moffat, T.
(2016),
Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias, ECS Transactions
(Accessed May 2, 2025)
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Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
Published
Author(s)
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Abstract
This work demonstrates void-free cobalt filling of 56 um tall, annual Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-NDR mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.Citation
ECS Transactions
Pub Type
Journals
Keywords
cobalt, superfill, superconformal, TSV, through silicon via
Citation
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Created September 23, 2016, Updated April 20, 2017