NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Bottom-up Copper Filling of Millimeter Size Through Silicon Vias
Published
Author(s)
Daniel Josell, Thomas P. Moffat, Lyle Menk, Andrew Hollowell, M Blain
Abstract
This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the free-surface due to non-uniform coupling with electrolyte hydrodynamics. Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.
Citation
Journal of the Electrochemical Society
Pub Type
Journals
Keywords
interconnect, superfill, copper, electrodeposition, TSV, through silicon via
Josell, D.
, Moffat, T.
, Menk, L.
, Hollowell, A.
and Blain, M.
(2019),
Bottom-up Copper Filling of Millimeter Size Through Silicon Vias, Journal of the Electrochemical Society
(Accessed October 8, 2025)