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Displaying 101 - 125 of 296

High-Voltage, High-Frequency SiC Power MOSFETs Model Validation

June 21, 2007
Author(s)
Jose M. Ortiz, Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr.
Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

February 25, 2007
Author(s)
Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley
This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single

Modeling MEMS Microhotplate Structures With SystemC

October 25, 2006
Author(s)
Ankush Varma, Muhammad Afridi, Akin Akturk, Paul Klein, Allen R. Hefner Jr., Bruce Jacob
Designers of SoCs with non-digital components, such as analog or MEMS devices, can currently use highlevel system design languages, such as SystemC, to model only the digital parts of a system. This is a significant limitation, since it makes key system

Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

October 1, 2006
Author(s)
David W. Berning, Allen R. Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)

August 1, 2006
Author(s)
Javier Salcedo, Juin J. Liou, Muhammad Y. Afridi, Allen R. Hefner Jr.
An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyristor

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

July 1, 2006
Author(s)
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for

10 kV, 5A 4H-SiC Power DMOSFET

May 1, 2006
Author(s)
Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.
In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with

Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices

March 22, 2006
Author(s)
Allen R. Hefner Jr.
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

Reliability and Performance Limitations in SiC Power Devices

December 27, 2005
Author(s)
Ranbir Singh, Allen R. Hefner Jr.
Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes