A High-Speed Thermal Imaging System for Semiconductor Device Analysis

Published

April 1, 2001

Author(s)

Allen R. Hefner Jr., David W. Berning, David L. Blackburn, Christophe C. Chapuy, Sebastien Bouche

Abstract

A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument graphical user interface software that controls an infrared thermal microscope, translation stages, digitizing oscilloscope, and a device test fixture temperature controller. The computer interface consists of a front panel for viewing the temperature distribution and includes a movie play back feature that enables viewing of the temperature distribution versus time. The computer user interface also has a sub-panel for emissivity mapping and calibration of the infrared detector. The utility of the system is demonstrated in this paper using a bipolar transistor hotspot current constriction process.

Proceedings Title

Proc., Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium

Conference Dates

March 20-22, 2001

Conference Location

San Jose, CA, USA

Pub Type

Conferences

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Keywords

infrared thermal measurement, semiconductor device heating, transient thermal image

Citation

Hefner Jr., A. , Berning, D. , Blackburn, D. , Chapuy, C. and Bouche, S. (2001), A High-Speed Thermal Imaging System for Semiconductor Device Analysis, Proc., Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, San Jose, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=15525 (Accessed March 22, 2025)