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Displaying 126 - 148 of 148

Vertical Insulated Gate Bipolar Transistor Lumped Model and Saber Simulator Implementation

May 1, 1994

Author(s)

Allen R. Hefner Jr.

Electro-Thermal Simulation of an IGBT PWM Inverter

December 31, 1993

Author(s)

Alan Mantooth, Allen R. Hefner Jr.

Modeling Buffer Layer IGBT's for Circuit Simulation

December 31, 1993

Author(s)

Allen R. Hefner Jr.

Thermal Component Models for Electrothermal Network Simulation

December 31, 1993

Author(s)

Allen R. Hefner Jr., David L. Blackburn

Simulating the Dynamic Electro-Thermal Behavior of Power Electronic Circuits and Systems

October 1, 1993

Author(s)

Allen R. Hefner Jr., David L. Blackburn

Insulated Gate Bipolar Transistor (IGBT) Modeling Using IG-Spice

February 1, 1993

Author(s)

C. S. Mitter, Allen R. Hefner Jr., D X. Chen, F. C. Lee

A Dynamic Electro-Thermal Model for the IGBT

December 31, 1992

Author(s)

Allen R. Hefner Jr.

Simulating the Dynamic Electro-Thermal Behavior of Power Electronic Circuits and Systems

December 31, 1992

Author(s)

Allen R. Hefner Jr.

A Dynamic Electro-Thermal Model for the IGBT

November 16, 1992

Author(s)

Allen R. Hefner Jr.

Semiconductor Measurement Technology: INSTANT - IGBT Network Simulation and Transient ANalysis Tool

June 1, 1992

Author(s)

Allen R. Hefner Jr.

An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator

December 31, 1991

Author(s)

Allen R. Hefner Jr., D. M. Diebolt

Insulated Gate Bipolar Transistor (IGBT) Modeling Using IG-Spice

December 31, 1991

Author(s)

C. S. Mitter, Allen R. Hefner Jr., D X. Chen, F. C. Lee

An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator

July 31, 1991

Author(s)

Allen R. Hefner Jr., D. M. Diebolt

An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)

December 31, 1990

Author(s)

Allen R. Hefner Jr.

Device Models, Circuit Simulation, and Computer Controlled Measurements for the IGBT

December 31, 1990

Author(s)

Allen R. Hefner Jr.

Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)

December 1, 1990

Author(s)

Allen R. Hefner Jr.

An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

October 1, 1990

Author(s)

Allen R. Hefner Jr.

An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)

June 21, 1990

Author(s)

Allen R. Hefner Jr.

An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

December 31, 1989

Author(s)

Allen R. Hefner Jr.

A Steady-State Model for the Insulated Gate Bipolar Transistor

December 31, 1988

Author(s)

Allen R. Hefner Jr., David L. Blackburn, Kathleen Gallo

An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor

December 31, 1988

Author(s)

Allen R. Hefner Jr., David L. Blackburn

Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT)

December 31, 1988

Author(s)

Allen R. Hefner Jr.

Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)

December 31, 1988

Author(s)

Allen R. Hefner Jr.

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