Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)

Published

Author(s)

Allen R. Hefner Jr.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 2-7, 1988
Conference Location
Pittsburgh, PA
Conference Title
IEEE Industry Applications Society (IAS) Annual Meeting

Citation

Hefner, A. (1988), Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT), Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Pittsburgh, PA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=10737 (Accessed May 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1988, Updated February 19, 2017