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Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT)

Published

Author(s)

Allen R. Hefner Jr.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 2-7, 1988
Conference Location
Pittsburgh, PA

Citation

Hefner, A. (1988), Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT), Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Pittsburgh, PA (Accessed March 29, 2024)
Created December 31, 1988, Updated February 17, 2017