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Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT)

Published

Author(s)

Allen R. Hefner Jr.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 2-7, 1988
Conference Location
Pittsburgh, PA

Citation

Hefner, A. (1988), Analytical Modeling of Device-Circuit Interactions for the Insulated Gate Bipolar Transistor (IGBT), Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Pittsburgh, PA (Accessed June 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1988, Updated February 17, 2017