Hefner Jr., A.
and Blackburn, D.
(1988),
An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor, Solid-State Electronics
(Accessed April 24, 2025)
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An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor
Published
Author(s)
,
Citation
Solid-State Electronics
Volume
31
Issue
10
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1988, Updated October 12, 2021