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An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor

Published

Author(s)

Allen R. Hefner Jr., David L. Blackburn
Citation
Solid-State Electronics
Volume
31
Issue
10

Citation

Hefner Jr., A. and Blackburn, D. (1988), An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor, Solid-State Electronics (Accessed May 20, 2024)

Issues

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Created December 30, 1988, Updated October 12, 2021