Hefner Jr., A.
and Blackburn, D.
(1988),
An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor, Solid-State Electronics
(Accessed May 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor
Published
Author(s)
,
Citation
Solid-State Electronics
Volume
31
Issue
10
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1988, Updated October 12, 2021