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A Steady-State Model for the Insulated Gate Bipolar Transistor

Published

Author(s)

Allen R. Hefner Jr., David L. Blackburn, Kathleen Gallo
Proceedings Title
Proc., 4th International Workshop on Physics of Semiconductor Devices, S. C. Jain and S. Radhakrishna, Eds.
Conference Dates
December 10-15, 1987
Conference Location
Madras, 1, IN

Citation

Hefner Jr., A. , Blackburn, D. and Gallo, K. (1988), A Steady-State Model for the Insulated Gate Bipolar Transistor, Proc., 4th International Workshop on Physics of Semiconductor Devices, S. C. Jain and S. Radhakrishna, Eds., Madras, 1, IN (Accessed April 15, 2024)
Created December 30, 1988, Updated October 12, 2021