Hefner Jr., A.
, Blackburn, D.
and Gallo, K.
(1988),
A Steady-State Model for the Insulated Gate Bipolar Transistor, Proc., 4th International Workshop on Physics of Semiconductor Devices, S. C. Jain and S. Radhakrishna, Eds., Madras, 1, IN
(Accessed December 3, 2024)
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A Steady-State Model for the Insulated Gate Bipolar Transistor
Published
Author(s)
, ,
Proceedings Title
Proc., 4th International Workshop on Physics of Semiconductor Devices, S. C. Jain and S. Radhakrishna, Eds.
Conference Dates
December 10-15, 1987
Conference Location
Madras, 1, IN
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1988, Updated October 12, 2021