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An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

Published

Author(s)

Allen R. Hefner Jr.
Proceedings Title
Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89
Conference Dates
June 26-29, 1989
Conference Location
Milwaukee, WI

Citation

Hefner, A. (1989), An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT), Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89, Milwaukee, WI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=13970 (Accessed April 14, 2024)
Created December 31, 1989, Updated February 19, 2017