Hefner, A.
(1989),
An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT), Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89, Milwaukee, WI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=13970
(Accessed December 14, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published
Author(s)
Proceedings Title
Proc., 20th Annual IEEE Power Electronics Specialists Conf., PESC '89
Conference Dates
June 26-29, 1989
Conference Location
Milwaukee, WI
Pub Type
Conferences
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1989, Updated February 19, 2017