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An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

Published

Author(s)

Allen R. Hefner Jr.
Citation
IEEE Transactions on Power Electronics
Volume
5
Issue
4

Citation

Hefner, A. (1990), An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT), IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=24009 (Accessed June 17, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 1, 1990, Updated February 19, 2017