Hefner, A.
(1990),
An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT), IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=24009
(Accessed March 13, 2025)
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An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published
Author(s)
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IEEE Transactions on Power Electronics
Volume
5
Issue
4
Pub Type
Journals
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Created October 1, 1990, Updated February 19, 2017