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Displaying 42026 - 42050 of 73697

Scale-Space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

January 1, 2003
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Scattering by Wedges

January 1, 2003
Author(s)
Egon Marx
Some of the components of the fields produced by an incident plane monochromatic wave scattered by a wedge diverge near the edge of the wedge. Rigorous solutions for the fields scattered by a perfectly conducting infinite wedge have been obtained, but this

Secondary Ion Mass Spectrometry Using Cluster Primary Ion Beams

January 1, 2003
Author(s)
John G. Gillen, Albert J. Fahey
At the National Institute of Standards and Technology (NIST) we have a capability for conducting cluster SIMS experiments on both our ion microscope and TOF-SIMS instruments. This paper will review our recent work on cluster ion source development

Security of Electronic Mail

January 1, 2003
Author(s)
Shirley M. Radack
This ITL Bulletin summarizes NIST Special Publication (SP) 800-45, Guidelines on Electronic Mail Security, September 2002, which helps federal agencies improve the secure design, implementation, and operation of their electronic mail servers and clients.
Displaying 42026 - 42050 of 73697
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