Levine, Z.
, Gao, J.
, Neogi, S.
, Levin, T.
, Scott, J.
and Grantham, S.
(2003),
Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope, Journal of Applied Physics
(Accessed April 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope
Published
Author(s)
, J J. Gao, S Neogi, T M. Levin, J H. Scott,
Abstract
At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%, and external validity at the level of 20%.Citation
Journal of Applied Physics
Volume
93
Issue
No. 4
Pub Type
Journals
Keywords
electron microscope, integrated circuit interconnect, parallax, tilt-series
Citation
Created February 1, 2003, Updated February 17, 2017