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Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope

Published

Author(s)

Zachary H. Levine, J J. Gao, S Neogi, T M. Levin, J H. Scott, Steven E. Grantham

Abstract

At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%, and external validity at the level of 20%.
Citation
Journal of Applied Physics
Volume
93
Issue
No. 4

Keywords

electron microscope, integrated circuit interconnect, parallax, tilt-series

Citation

Levine, Z. , Gao, J. , Neogi, S. , Levin, T. , Scott, J. and Grantham, S. (2003), Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope, Journal of Applied Physics (Accessed February 24, 2024)
Created February 1, 2003, Updated February 17, 2017