Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope
Zachary H. Levine, J J. Gao, S Neogi, T M. Levin, J H. Scott, Steven E. Grantham
At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%, and external validity at the level of 20%.
Journal of Applied Physics
electron microscope, integrated circuit interconnect, parallax, tilt-series
, Gao, J.
, Neogi, S.
, Levin, T.
, Scott, J.
and Grantham, S.
Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope, Journal of Applied Physics
(Accessed June 5, 2023)