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Nanotechnology

Nanometrology

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Displaying 751 - 775 of 866

Accurate Picoscale Forces for Insitu Calibration of AFM

September 3, 2009
Author(s)
Koo-Hyun Chung, Gordon A. Shaw, Jon R. Pratt
The force sensitivity of an atomic force microscope is calibrated directly using an in situ realization of primary electrostatic forces ranging from 320 pN to 3.3 nN with accuracy of a few percent. The absolute accuracy of a common atomic force microscope

193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology

August 24, 2009
Author(s)
Martin Sohn, Richard Quintanilha, Bryan Barnes, Richard Silver
An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and

Nanoscale Photoresponse in Blended Organic Photovoltaics

August 16, 2009
Author(s)
Behrang H. Hamadani, Suyong S. Jung, Nikolai B. Zhitenev
Organic solar cells, which have attracted considerable interest over the last few years as low-cost, simply-processed alternatives for harvesting the solar energy, have interesting nanoscale properties; a thorough understanding of which is currently

ENABLING STANDARDS FOR NANOMATERIAL CHARACTERIZATION

August 13, 2009
Author(s)
Vincent A. Hackley, Martin Fritts, James F. Kelly, Anil K. Patri, Alan F. Rawle
A two-day international workshop was convened recently in order to scope out and address the urgent need for standards to accurately characterize the physico-chemical and biological properties of engineered nanomaterials. These standards are needed by

Nanoscale Measurements with a Through-Focus Scanning-Optical-Microscope

July 15, 2009
Author(s)
Ravikiran Attota, Richard M. Silver, Thomas A. Germer
We present a novel optical technique that produces nanometer dimensional measurement sensitivity using a conventional optical microscope, by analyzing through-focus scanning-optical-microscope (TSOM) images obtained at different focus positions. In

Robust Volume Calculations of Tumors of Various Sizes

July 13, 2009
Author(s)
Adele P. Peskin, Karen Kafadar, A.M. Santos, Gillian Haemer
Many advances in medicine today require the accurate reading of computerized tomographic (CT) images of the body. Tumors in the lung, for example, are classified according to their detected growth, i.e. change in volume, over a period of time. CT data are

Fracture toughness measurement of thin nanoporous films on stiff substrates

June 15, 2009
Author(s)
Dylan Morris, Robert F. Cook
Nanoporous low-dielectric-constant films constitute a class of materials that are plagued by fracture concerns and are not amenable to traditional fracture toughness measurement techniques. An indentation fracture toughness measurement technique has been

Optimization of Accurate SEM Imaging by Use of Artificial Images

May 22, 2009
Author(s)
Petr Cizmar, Andras Vladar, Michael T. Postek
Today the vast majority of the scanning electron microscopes (SEMs) are incapable of taking repeatable and accurate images at high magnifications. Geometric distortions are common, so are drift, vibration, and problems related to disturbing electro

Imaging Response of Optical Microscopes Containing Angled Micromirrors

April 30, 2009
Author(s)
Andrew J. Berglund, Matthew D. McMahon, Jabez J. McClelland, James A. Liddle
We describe the aberrations induced by introducing micromirrors into the object space of a microscope. These play a critical role in determining the accuracy of recent three-dimensional particle tracking methods based on such devices.

Reference Metrology in a Research Fab: The NIST Clean Calibrations Thrust

April 12, 2009
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Thomas B. Renegar, Xiaoyu A. Zheng, Theodore V. Vorburger, Albert M. Hilton, Marc J. Cangemi, Lei Chen, Michael A. Hernandez, Russell E. Hajdaj, Michael R. Bishop, Aaron Cordes
In 2004, the National Institute of Standards and Technology (NIST) commissioned the Advanced Measurement Laboratory (AML) – a state-of-the-art, five-wing laboratory complex for leading edge NIST research. The NIST NanoFab – a 1765 m2 (19,000 ft2) clean

Dielectric Spectroscopy Investigation of Relaxation in C60-Polyisoprene Nanocomposites

March 23, 2009
Author(s)
Yifu Ding, Sebastian Pawlus, Alexei Sokolov, Jack F. Douglas, Alamgir Karim, Christopher Soles
We investigate the influence of adding C60 nanoparticles on the dielectric relaxation spectra of both unentangled and entangled polyisoprene (PIP). Relaxation modes corresponding to both segmental and chain relaxation were analyzed over a broad temperature

Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

March 20, 2009
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Phillip N. First, Joseph A. Stroscio
The realization of graphene-based electronics involves numerous challenges that include large-scale device fabrication and the ability to control the electronic properties of the graphene material1. As a nearly ideal 2D conductor, the electronic properties

Primary Standards and Dosimetry Protocols for Brachytherapy Sources

March 20, 2009
Author(s)
Christopher G. Soares, G. Douyssey, Michael G. Mitch
Current primary standards for the calibration of both photon and beta particle emitting brachythrapy sources are reviewed. Methods for quality control being used as well as methods of transferring these standards to secondary laboratories and user are also

3D Particle Trajectories Observed by Orthogonal Tracking Microscopy

February 9, 2009
Author(s)
Matthew D. McMahon, Andrew J. Berglund, Peter T. Carmichael, Jabez J. McClelland, James A. Liddle
We demonstrate high-resolution, high-speed 3D nanoparticle tracking using angled micromirrors. When angled micromirrors are introduced into the field of view of an optical microscope, reflected side-on views of a diffusing nanoparticle are projected

Half-life Measurements of Sr82

January 30, 2009
Author(s)
Leticia S. Pibida, Ryan P. Fitzgerald, Michael P. Unterweger, Michelle M. Hammond, Daniel B. Golas
Half-life measurements of 82Sr were performed at the National Institute of Standards and Technology (NIST) using gamma-ray spectrometry and a 4 pressurized ionization chamber. The 82Sr half-life was determined to be 25.36 ± 0.03 days (k=1) using the

Scatterometry for in situ measurement of pattern reflow in nanoimprinted polymers

December 9, 2008
Author(s)
Heather J. Patrick, Thomas A. Germer, Yifu Ding, Hyun Wook Ro, Lee J. Richter, Christopher L. Soles
We use optical scatterometry to extract the time evolution of the profile of nanoimprinted lines in low and high molecular mass polymer gratings during reflow at the glass transition temperature. The data are obtained continuously during the anneal using a
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