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Nanotechnology

Nanometrology

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Displaying 751 - 775 of 855

Imaging Response of Optical Microscopes Containing Angled Micromirrors

April 30, 2009
Author(s)
Andrew J. Berglund, Matthew D. McMahon, Jabez J. McClelland, James A. Liddle
We describe the aberrations induced by introducing micromirrors into the object space of a microscope. These play a critical role in determining the accuracy of recent three-dimensional particle tracking methods based on such devices.

Reference Metrology in a Research Fab: The NIST Clean Calibrations Thrust

April 12, 2009
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Thomas B. Renegar, Xiaoyu A. Zheng, Theodore V. Vorburger, Albert M. Hilton, Marc J. Cangemi, Lei Chen, Michael A. Hernandez, Russell E. Hajdaj, Michael R. Bishop, Aaron Cordes
In 2004, the National Institute of Standards and Technology (NIST) commissioned the Advanced Measurement Laboratory (AML) – a state-of-the-art, five-wing laboratory complex for leading edge NIST research. The NIST NanoFab – a 1765 m2 (19,000 ft2) clean

Dielectric Spectroscopy Investigation of Relaxation in C60-Polyisoprene Nanocomposites

March 23, 2009
Author(s)
Yifu Ding, Sebastian Pawlus, Alexei Sokolov, Jack F. Douglas, Alamgir Karim, Christopher Soles
We investigate the influence of adding C60 nanoparticles on the dielectric relaxation spectra of both unentangled and entangled polyisoprene (PIP). Relaxation modes corresponding to both segmental and chain relaxation were analyzed over a broad temperature

Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

March 20, 2009
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Phillip N. First, Joseph A. Stroscio
The realization of graphene-based electronics involves numerous challenges that include large-scale device fabrication and the ability to control the electronic properties of the graphene material1. As a nearly ideal 2D conductor, the electronic properties

Primary Standards and Dosimetry Protocols for Brachytherapy Sources

March 20, 2009
Author(s)
Christopher G. Soares, G. Douyssey, Michael G. Mitch
Current primary standards for the calibration of both photon and beta particle emitting brachythrapy sources are reviewed. Methods for quality control being used as well as methods of transferring these standards to secondary laboratories and user are also

3D Particle Trajectories Observed by Orthogonal Tracking Microscopy

February 9, 2009
Author(s)
Matthew D. McMahon, Andrew J. Berglund, Peter T. Carmichael, Jabez J. McClelland, James A. Liddle
We demonstrate high-resolution, high-speed 3D nanoparticle tracking using angled micromirrors. When angled micromirrors are introduced into the field of view of an optical microscope, reflected side-on views of a diffusing nanoparticle are projected

Half-life Measurements of Sr82

January 30, 2009
Author(s)
Leticia S. Pibida, Ryan P. Fitzgerald, Michael P. Unterweger, Michelle M. Hammond, Daniel B. Golas
Half-life measurements of 82Sr were performed at the National Institute of Standards and Technology (NIST) using gamma-ray spectrometry and a 4 pressurized ionization chamber. The 82Sr half-life was determined to be 25.36 ± 0.03 days (k=1) using the

Scatterometry for in situ measurement of pattern reflow in nanoimprinted polymers

December 9, 2008
Author(s)
Heather J. Patrick, Thomas A. Germer, Yifu Ding, Hyun Wook Ro, Lee J. Richter, Christopher L. Soles
We use optical scatterometry to extract the time evolution of the profile of nanoimprinted lines in low and high molecular mass polymer gratings during reflow at the glass transition temperature. The data are obtained continuously during the anneal using a

Standardization of 68Ge/68Ga using three liquid scintillation counting-based methods

October 31, 2008
Author(s)
Brian E. Zimmerman, Jeffrey T. Cessna, Ryan P. Fitzgerald
A solution containing 68Ge in equilibrium with its daughter, 68Ga, has been standardized for the first time at the National Institute of Standards and Technology using 3 liquid scintillation- based techniques: live-timed 4pb-g anticoincidence (LTAC)

Comparison of NIST SI Force Scale to NPL SI Mass Scale

October 19, 2008
Author(s)
Christopher W. Jones, John A. Kramar, Stuart Davidson, Richard Leach, Jon R. Pratt
Small masses in the 1.0 mg to 0.1 mg range were developed and calibrated at NPL with traceability to the IPK. These masses were transported to NIST at Gaithersburg and used as deadweights on the NIST electrostatic force balance, to facilitate a mass-force

Contact resonance atomic force microscopy for viscoelasticity

October 15, 2008
Author(s)
Donna C. Hurley, Philip Yuya, J Turner
We present a quantitative method for determining the viscoelastic properties of materials with nanometer spatial resolution. The approach is based on the atomic force acoustic microscopy (AFAM) technique that involves the resonant frequencies of the AFM

Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis

September 1, 2008
Author(s)
Ravikiran Attota, Michael T. Stocker, Richard M. Silver, Nathanael A. Heckert, Hui Zhou, Richard J. Kasica, Lei Chen, Ronald G. Dixson, Ndubuisi G. Orji, Bryan M. Barnes, Peter Lipscomb
In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They are

Fast, bias-free algorithm for tracking single particles with variable size and shape

August 26, 2008
Author(s)
Andrew J. Berglund, Matthew D. McMahon, Jabez J. McClelland, James A. Liddle
We introduce a fast and robust technique for single-particle tracking with nanometer accuracy.We extract the center-of-mass of the image of a single particle with a simple, iterative algorithm that efficiently suppresses background-induced bias in a

Magneto-Optical-Trap-Based, High Brightness Ion Source for Use as a Nanoscale Probe

August 21, 2008
Author(s)
James L. Hanssen, Shannon B. Hill, Jon Orloff, Jabez J. McClelland
We report on the demonstration of a low emittance, high brightness ion source based on magneto-optically trapped neutral atoms. Our source has ion optical properties comparable to or better than those of the commonly used liquid metal ion source. In

Structural and Electronic Properties of Bilayer Epitaxial Graphene

July 1, 2008
Author(s)
Gregory M. Rutter, Jason Crain, N Guisinger, Phillip N. First, Joseph A. Stroscio
Scanning tunneling microscopy (STM) and spectroscopy (STS) is used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface roughness and is observed

The Atomic-Scale Investigation of Graphene Formation on 6H-SiC(0001)

July 1, 2008
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Christian Heiliger, P First, Joseph A. Stroscio
The growth of graphene on the silicon terminated face of 6H-SiC(0001) was investigated by scanning tunneling microscopy (STM) measurements. The initial stages of ultra high vacuum (UHV) graphitization resulted in the growth of individual graphene sheets on
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