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Nanotechnology

Nanometrology

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Displaying 776 - 800 of 866

Standardization of 68Ge/68Ga using three liquid scintillation counting-based methods

October 31, 2008
Author(s)
Brian E. Zimmerman, Jeffrey T. Cessna, Ryan P. Fitzgerald
A solution containing 68Ge in equilibrium with its daughter, 68Ga, has been standardized for the first time at the National Institute of Standards and Technology using 3 liquid scintillation- based techniques: live-timed 4pb-g anticoincidence (LTAC)

Comparison of NIST SI Force Scale to NPL SI Mass Scale

October 19, 2008
Author(s)
Christopher W. Jones, John A. Kramar, Stuart Davidson, Richard Leach, Jon R. Pratt
Small masses in the 1.0 mg to 0.1 mg range were developed and calibrated at NPL with traceability to the IPK. These masses were transported to NIST at Gaithersburg and used as deadweights on the NIST electrostatic force balance, to facilitate a mass-force

Contact resonance atomic force microscopy for viscoelasticity

October 15, 2008
Author(s)
Donna C. Hurley, Philip Yuya, J Turner
We present a quantitative method for determining the viscoelastic properties of materials with nanometer spatial resolution. The approach is based on the atomic force acoustic microscopy (AFAM) technique that involves the resonant frequencies of the AFM

Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis

September 1, 2008
Author(s)
Ravikiran Attota, Michael T. Stocker, Richard M. Silver, Nathanael A. Heckert, Hui Zhou, Richard J. Kasica, Lei Chen, Ronald G. Dixson, Ndubuisi G. Orji, Bryan M. Barnes, Peter Lipscomb
In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They are

Fast, bias-free algorithm for tracking single particles with variable size and shape

August 26, 2008
Author(s)
Andrew J. Berglund, Matthew D. McMahon, Jabez J. McClelland, James A. Liddle
We introduce a fast and robust technique for single-particle tracking with nanometer accuracy.We extract the center-of-mass of the image of a single particle with a simple, iterative algorithm that efficiently suppresses background-induced bias in a

Magneto-Optical-Trap-Based, High Brightness Ion Source for Use as a Nanoscale Probe

August 21, 2008
Author(s)
James L. Hanssen, Shannon B. Hill, Jon Orloff, Jabez J. McClelland
We report on the demonstration of a low emittance, high brightness ion source based on magneto-optically trapped neutral atoms. Our source has ion optical properties comparable to or better than those of the commonly used liquid metal ion source. In

Structural and Electronic Properties of Bilayer Epitaxial Graphene

July 1, 2008
Author(s)
Gregory M. Rutter, Jason Crain, N Guisinger, Phillip N. First, Joseph A. Stroscio
Scanning tunneling microscopy (STM) and spectroscopy (STS) is used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface roughness and is observed

The Atomic-Scale Investigation of Graphene Formation on 6H-SiC(0001)

July 1, 2008
Author(s)
N Guisinger, Gregory M. Rutter, Jason Crain, Christian Heiliger, P First, Joseph A. Stroscio
The growth of graphene on the silicon terminated face of 6H-SiC(0001) was investigated by scanning tunneling microscopy (STM) measurements. The initial stages of ultra high vacuum (UHV) graphitization resulted in the growth of individual graphene sheets on

Prototype Cantilevers for AFM Lateral Force Measurement

June 2, 2008
Author(s)
Richard S. Gates, Mark Reitsma
One of the major difficulties in calibrating the lateral forces measured with optical lever Atomic Force Microscopy is in determining the lateral optical lever sensitivity. Novel cantilevers have been designed and fabricated to simplify this measurement

Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

December 14, 2007
Author(s)
Gregory M. Rutter, N Guisinger, Jason Crain, Emily Jarvis, Mark D. Stiles, T Li, P First, Joseph A. Stroscio
The potential for electronics based on graphene, a single layer of sp2-bonded carbon atoms, rests on the ability to fabricate graphene into useful devices. Graphene grown epitaxially on SiC substrates offers an avenue for carbon-based electronics allowing

Development of Ultra-Low Magnetic Field Sensors With Magnetic Tunnel Junctions

October 31, 2007
Author(s)
Philip Pong, John E. Bonevich, William F. Egelhoff Jr.
The discovery of tunneling magnetoresistance (TMR) has enhanced the magnetoresistance (MR) ratio from the giant magnetoresistance (GMR) regime of around 10% to over 400% at room temperature. A combination of magnetic tunnel junctions with high

Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy

September 4, 2007
Author(s)
Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D. van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, we

Scattering and Interference in Epitaxial Graphene

July 13, 2007
Author(s)
Gregory M. Rutter, Jason Crain, T Li, P First, Joseph A. Stroscio
A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is
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