Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen

Published

March 20, 2009

Author(s)

N Guisinger, Gregory M. Rutter, Jason Crain, Phillip N. First, Joseph A. Stroscio

Abstract

The realization of graphene-based electronics involves numerous challenges that include large-scale device fabrication and the ability to control the electronic properties of the graphene material1. As a nearly ideal 2D conductor, the electronic properties of graphene are very susceptible to the surrounding environment. Variations in the electronic properties are observed between a single sheet of graphene and when two or more sheets are stacked together. In addition, the supporting substrate can affect the graphene, while numerous efforts are trying to intentionally modify its electronic behavior through electrostatic gating and impurity doping. In this paper, we show the effect of exposing graphitized SiC(0001) to atomic hydrogen in an effort to modify the electronic properties of the graphene overlayer. Utilizing ultra-high vacuum (UHV) scanning tunneling microscopy (STM) we are able to study these effects at the atomic-scale.

Citation

Nano Letters

Volume

9

Issue

4

Pub Type

Journals

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Keywords

graphene, graphite, silicon carbide, scanning tunneling microscopy

Citation

Guisinger, N. , Rutter, G. , Crain, J. , First, P. and Stroscio, J. (2009), Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620603 (Accessed October 13, 2025)