Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen



N Guisinger, Gregory M. Rutter, Jason Crain, Phillip N. First, Joseph A. Stroscio


The realization of graphene-based electronics involves numerous challenges that include large-scale device fabrication and the ability to control the electronic properties of the graphene material1. As a nearly ideal 2D conductor, the electronic properties of graphene are very susceptible to the surrounding environment. Variations in the electronic properties are observed between a single sheet of graphene and when two or more sheets are stacked together. In addition, the supporting substrate can affect the graphene, while numerous efforts are trying to intentionally modify its electronic behavior through electrostatic gating and impurity doping. In this paper, we show the effect of exposing graphitized SiC(0001) to atomic hydrogen in an effort to modify the electronic properties of the graphene overlayer. Utilizing ultra-high vacuum (UHV) scanning tunneling microscopy (STM) we are able to study these effects at the atomic-scale.
Nano Letters


graphene, graphite, silicon carbide, scanning tunneling microscopy


Guisinger, N. , Rutter, G. , Crain, J. , First, P. and Stroscio, J. (2009), Exposure of Epitaxial Graphene on SiC(0001) to Atomic Hydrogen, Nano Letters, [online], (Accessed July 14, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created March 19, 2009, Updated October 12, 2021