Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Structural and Electronic Properties of Bilayer Epitaxial Graphene



Gregory M. Rutter, Jason Crain, N Guisinger, Phillip N. First, Joseph A. Stroscio


Scanning tunneling microscopy (STM) and spectroscopy (STS) is used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface roughness and is observed to be continuous across steps separating adjoining terraces. Bilayer epitaxial graphene is shown to be Bernal stacked as evidenced by bias dependent topographic imaging. STS maps of the differential conductance of bilayer graphene show that graphene lattice defects cause scattering of charge carriers near the Fermi level. An analysis of the scattering observed in the conductance maps allows the measurement of the energy-momentum dispersion relation within 100 meV of the Fermi level. In contrast to lattice defects, the disorder from the interface and surface steps below the graphene play a much lesser role in the scattering of charge carriers.
Journal of Vacuum Science and Technology A


graphene, scanning tunneling microscopy, scanning tunneling spectroscopy, silicon carbide


Rutter, G. , Crain, J. , Guisinger, N. , First, P. and Stroscio, J. (2008), Structural and Electronic Properties of Bilayer Epitaxial Graphene, Journal of Vacuum Science and Technology A, [online], (Accessed July 15, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created July 1, 2008, Updated February 19, 2017