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Scatterometry for in situ measurement of pattern reflow in nanoimprinted polymers

Published

Author(s)

Heather J. Patrick, Thomas A. Germer, Yifu Ding, Hyun Wook Ro, Lee J. Richter, Christopher L. Soles

Abstract

We use optical scatterometry to extract the time evolution of the profile of nanoimprinted lines in low and high molecular mass polymer gratings during reflow at the glass transition temperature. The data are obtained continuously during the anneal using a spectroscopic ellipsometer and analyzed using a rigorous-coupled-wave model. We show excellent agreement of scatterometry results with ex situ measurements of line height by atomic force microscopy and specular x-ray reflectivity. The in situ scatterometry results reveal differences in the shape evolution of the grating lines indiscernible by other methods.
Citation
Applied Physics Letters
Volume
93

Keywords

ellipsometry, nanoimprint, optics, polymers, scatterometry, semiconductors

Citation

Patrick, H. , Germer, T. , Ding, Y. , , H. , Richter, L. and Soles, C. (2008), Scatterometry for in situ measurement of pattern reflow in nanoimprinted polymers, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900878 (Accessed October 22, 2021)
Created December 9, 2008, Updated February 19, 2017