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Displaying 651 - 675 of 855

An interferometric platform for studying AFM probe deflection

January 3, 2011
Author(s)
Jon R. Pratt, Lee Kumanchik, Tony L. Schmitz
This paper describes an interferometric platform for measuring the full-field deflection of atomic force microscope (AFM) probes and generic cantilevers during quasi-static loading. The platform consists of a scanning white light interferometer (SWLI)

A 10 mK Scanning Probe Microscopy Facility

December 29, 2010
Author(s)
Young J. Song, Alexander F. Otte, Steven R. Blankenship, Alan H. Band, Frank M. Hess, Young Kuk, Vladimir Shvarts, Zuyu Zhao, Joseph A. Stroscio
We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up to 15 T. The microscope is cooled by a custom designed, fully ultra-high vacuum (UHV)

Characterizing a Scatterfield Optical Platform for Semiconductor Metrology

December 21, 2010
Author(s)
Bryan M. Barnes, Ravikiran Attota, Richard Quintanilha, Martin Y. Sohn, Richard M. Silver
Scatterfield microscopy is the union of a high-magnification imaging platform and the angular and/or wavelength control of scatterometry at the sample surface. Scatterfield microscopy uses Köhler illumination, where each point on the source translates to a

Scanning Probe Microscope Dimensional Metrology at NIST

December 21, 2010
Author(s)
John A. Kramar, Ronald G. Dixson, Ndubuisi G. Orji
Scanning probe microscopy (SPM) dimensional metrology efforts at the U.S. National Institute of Standards and Technology are reviewed. The main SPM instruments for realizing the International System of Units (SI) are the Molecular Measuring Machine, the

Structural Analysis of Soft Multicomponent Nanoparticle Clusters Using Electrospray Differential Mobility Analysis with Transmission Electron Microscopy

October 22, 2010
Author(s)
Leonard F. Pease , Jeremy Feldblyum, Silvia H. DePaoli Lacaerda, Rajesekhar Anumolu, Peter Yim, Matthew L. Clarke, Hyeong G. Kang, Jeeseong C. Hwang
Rapid and quantitative techniques are essential to analyze soft multicomponent nanoparticle clusters. Here we combine electrospray differential mobility analysis (ES-DMA), which measures the size of the entire cluster, with transmission electron microscopy

A Focused Chromium Ion Beam

October 21, 2010
Author(s)
Adam V. Steele, Brenton J. Knuffman, Jabez J. McClelland, Jon Orloff
With the goal of expanding the capabilities of focused ion beam microscopy and milling systems, we have demonstrated nanoscale focusing of chromium ions produced in a magneto-optical trap ion source (MOTIS). Neutral chromium atoms are captured into a

Contact Resistance of Flexible, Transparent Carbon Nanotube Films with Metals

October 7, 2010
Author(s)
Hua Xu, Lei Chen, Liangbing Hu, Nikolai B. Zhitenev
We studied the contact properties of different metals to flexible optically-transparent single-walled carbon nanotube (SWCNTs) films. The SWCNT films are deposited on flexible polyethylene terephthalate (PET) substrate and patterned in test structures

Atomistic Factors Governing Adhesion between Diamond, Amorphous Carbon, and Model Diamond Nanocomposite Surfaces

October 1, 2010
Author(s)
Pamela L. Piotrowski, Rachel J. Cannara, Guangtu Gao, Joseph J. Urban, Robert W. Carpick, Judith A. Harrison
Complementary atomic force microscopy (AFM) and molecular dynamics (MD) simulations were conducted to determine the work of adhesion for diamond(111)(1x1) and diamond(001)(2x1) surfaces paired with other carbon-based materials. In the AFM experiments, the

Characterization of a Soluble Anthradithiophene Derivative

October 1, 2010
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R. Parkin, Xinran Zhang, John E. Anthony, David J. Gundlach
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily

Nano- and Atom-scale Length Metrology

October 1, 2010
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Richard A. Allen, Michael W. Cresswell, Vincent A. Hackley
Measurements of length at the nano-scale have increasing importance in manufacturing, especially in the electronics and biomedical industries. The properties of linewidth and step height are critical to the function and specification of semiconductor

Advances in Modeling of Scanning Charged-Particle-Microscopy Images

September 19, 2010
Author(s)
Petr Cizmar, Andras Vladar, Michael T. Postek
Modeling scanning electron microscope (SEM) and scanning ion microscope images has recently become necessary, because of its ability to provide repeatable images with a priori determined parameters. Modeled artificial images have been used in evaluation of

Carbon Nanotubes: Measuring Dispersion and Length

August 26, 2010
Author(s)
Jeffrey A. Fagan, Barry J. Bauer, Erik K. Hobbie, Matthew Becker, Angela R. Hight Walker, Jeffrey R. Simpson, Jae H. Chun, Jan Obrzut, Vardhan Bajpai, Frederick R. Phelan Jr., Daneesh O. Simien, JiYeon Huh, Kalman D. Migler
Advanced technological uses of single-wall carbon nanotubes (SWCNTs) rely on the production of single length and chirality populations that are currently only available through liquid phase post processing. The foundation of all of these processing steps
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