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Characterization of a Soluble Anthradithiophene Derivative

Published

Author(s)

Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R. Parkin, Xinran Zhang, John E. Anthony, David J. Gundlach

Abstract

The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism.
Citation
Applied Physics Letters
Volume
97

Keywords

device, single crystal, organic, transistor, noise, TFT, AFM

Citation

Conrad, B. , Chan, C. , Loth, M. , Parkin, S. , Zhang, X. , Anthony, J. and Gundlach, D. (2010), Characterization of a Soluble Anthradithiophene Derivative, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905704 (Accessed February 27, 2024)
Created October 1, 2010, Updated February 19, 2017