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James D. Gilsinn, Hui Zhou, Bradley N. Damazo, Joseph Fu, Richard M. Silver
As nano-lithography technology improves, more companies and research groups have the capability to create nano-scale structures. Scanning tunneling microscopes (STMs) are commonly used to create these structures and evaluate them afterward. One difficulty
We derive expressions for the intensity and polarization of light singly scattered by flake pigments or a rough surface beneath a smooth transparent coating using the ray or facet model. The distribution of local surface normals is used to calculate the
Tony L. Schmitz, John A. Dagata, Brian S. Dutterer, W G. Sawyer
Microfluidic systems for analytical, medical, and sensing applications integrate optical or electrical readouts in low-cost, low-volume consumption systems. Embedding chemically functionalized templates with nanoscale topography within these devices links
Richard M. Silver, H Zou, S Gonda, Bradley N. Damazo, Jay S. Jun, Carsten P. Jensen, Lowell P. Howard
We have developed a new implementation of a Michelson interferometer which has demonstrated better than 20 picometer resolution measurement capability. This new method uses a tunable diode laser as the light source with the laser wavelength continuously
Andras Vladar, Richard M. Silver, James E. Potzick, John S. Villarrubia
The purpose of this project was to explore the currently used mask metrology methods and tools, to further develop mask metrology, and to design, fabricate and measure a new, relevant, 193 nm phase shifting mask metrology mask. These tasks were
Li Ma, Jun-Feng Song, Eric P. Whitenton, Theodore V. Vorburger, J Zhou, A Zheng
The SRM (Standard Reference Material) 2460 standard bullets are developed at the National Institute of Standards and Technology (NIST) to support the National Integrated Ballistics Information Network (NIBIN), recently established by the Bureau of Alcohol
Jun-Feng Song, Eric P. Whitenton, Li Ma, Theodore V. Vorburger, A Zheng
The RM (Reference Material) 8240 standard bullets are developed at the National Institute of Standards and Technology (NIST) to support the National Integrated Ballistics Information Network (NIBIN), recently established by the Bureau of Alcohol, Tobacco
Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Brandon Park, Christine E. Murabito, Joaquin (. Martinez
The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution. The final technology transfer report is currently undergoing revision and
An alternative technique for semiconductor metrology and inspection that minimizes, if not eliminates the sample charging is environmental or high pressure scanning electron microscopy. It offers the advantage and possible application of higher landing
High-pressure/environmental scanning electron microscopy has been used to successfully investigate binary and phase-shifting chromium on quartz optical photomasks. This methodology was also applied to patterned193 nm photoresist structures. The application
Variable-pressure/environmental scanning electron microscopy has been used for successful investigation binary and phase-shifting chromium on quartz optical photomasks. This methodology was also applied to patterned 193 nm photoresist structures. The
David B. Newell, Eric P. Whitenton, John A. Kramar, Jon R. Pratt, Douglas T. Smith
This paper is based, in its entirety, on NIST-approved publications: Calibration of Piezoresistive Cantilever Force Sensors Using the NIST Electrostatic Force Balance, The NIST Electrostatic Force Balance Experiment, The NIST Microforce Realization and
Jon R. Pratt, Douglas T. Smith, David B. Newell, John A. Kramar, Eric P. Whitenton
Recent experiments with the National Institute of Standards and Technology (NIST) Electrostatic Force Balance (EFB) have achieved agreement between an electrostatic force and a gravitational force of 10^(-5) N to within a few hundred pN/¿N. This result
Particle contamination of dielectric or conducting surfaces can be detected by shining light on the surface and looking for abnormal scattering distributions. This procedure can be simulated by computing the scattering distribution for a dielectric sphere
Accurate simulation of optical images of lines and trenches placed on semiconductors are of great interest to industry, especially in the overlay process. Similarly, optical images of photomasks in the transmission mode are also of interest. The basic
John S. Villarrubia, Andras Vladar, Michael T. Postek
Widths of developed 193 nm resist lines were measured by two methods and compared. One method was a new model-based library method. In this method the scanning electron microscope (SEM) images corresponding to various edge shapes are simulated in advance
Abstract: Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imaging
This is the third in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model. The previous article addressed the execution characteristics of actions in general, and
This is the fourth in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model [1]. The first article gives an overview of activities and actions [2], while the second two