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Manufacturing

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Displaying 1526 - 1550 of 2179

Refractometry Using a Helium Standard

July 1, 2004
Author(s)
Jack A. Stone Jr., Alois Stejskal
The refractive index of helium at atmospheric pressure can be calculated from first principles with a very low uncertainty, on the order of 10^-10. Furthermore, the low refractive index of helium puts minimal demands on the pressure and temperature

Test of CD-SEM Shape-Sensitive Linewidth Measurement

July 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
In a model-based library (MBL) approach to scanning electron microscope (SEM) linewidth measurement, a library of simulation results for a range of lineshapes is searched for a match to the measured image of the unknown line. Compared to standard

Gas Flowmeter Calibrations with the 34 L and 677 L PVTt Standards

June 23, 2004
Author(s)
John D. Wright, Aaron N. Johnson, Michael R. Moldover, Gina M. Kline
This document provides a description of the 34 L and 677 L pressure, volume, temperature, and time (PVTt) primary gas flow standards operated by the National Institute of Standards and Technology (NIST) Fluid Flow Group. These facilities are used to

Active Vibration Isolation for a Long-Range Scanning Tunneling Microscope

June 1, 2004
Author(s)
K J. Lan, J Y. Yen, John A. Kramar
Vibration Isolation or control is critical for the optimum operation of the Molecular Measuring Machine (M3), a high-resolution, length-metrology instrument at the National Institute of Standards and Technology. This paper describes the extension of the M3

STEP - Compliant NC Research: The Search for Intelligent CAD/CAPP/CAM/CNC Integration

May 31, 2004
Author(s)
Xun W. Xu, H Wang, Jian Mao, S T. Newman, Thomas Kramer, Frederick M. Proctor, John L. Michaloski
Since the first generation of NC machine tool was developed in 1950s, there have been many developments, which make today's NC machines completely unrecognisable from their early ancestors. These developments however are now being significantly limited by

Evaluation of New In-Chip and Arrayed Line Overlay Target Designs

May 24, 2004
Author(s)
M P. Davidson, M R. Bishop, Robert D. Larrabee, Michael T. Stocker, Jay S. Jun, Egon Marx, Richard M. Silver, Ravikiran Attota
Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device area

Laser Sample Stage-Based Image Resolution Enhancement Method for SEMs

May 24, 2004
Author(s)
Andras Vladar, Crossley E. Jayewardene, Bradley N. Damazo, William J. Keery, Michael T. Postek
The development of a very fast, very accurate laser stage measurement system facilitates a new method to enhance the image and line scan resolution of scanning electron microscopes (SEMs). This method, allows for fast signal intensity and displacement

Reference Metrology Using a Next Generation CD-AFM

May 24, 2004
Author(s)
Ronald G. Dixson, Angela Guerry
International SEMATECH (ISMT and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of AFM dimensional metrology in semiconductor manufacturing. Due to the unique metrology requirements and the rapid

IPPS: An Integrated Process Planning System

May 4, 2004
Author(s)
Suber Huang, J Mei, Xuhang Tong, Steven R. Ray
The past two decades have witnessed the development of many CAPP (Computer-Aided Process Planning) systems. From variant process planning to generative process planning, great progress has been made. However, due to the complexity of the problems involved

Determination of Optimal Parameters for CD-SEM Measurement of Line Edge Roughness

May 1, 2004
Author(s)
B Bunday, M R. Bishop, D Mccormack, John S. Villarrubia, Andras Vladar, Theodore V. Vorburger, Ndubuisi George Orji, J Allgair
The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists from

Dimensional Metrology of Resist Lines Using a SEM Model-Based Library Approach

May 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, B Bunday, M R. Bishop
The widths of 284 lines in a 193 nm resist were measured by two methods and the results compared. One method was scanning electron microscopy (SEM) of cross-sections. The other was a model-based library (MBL) approach in which top-down CD-SEM line scans of

Evaluation of New In-Chip and Arrayed Line Overlay

May 1, 2004
Author(s)
Ravikiran Attota, Richard M. Silver, M R. Bishop, Egon Marx, Jay S. Jun, Michael T. Stocker, M P. Davidson, Robert D. Larrabee
Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device area

High-Resolution Optical Overlay Metrology

May 1, 2004
Author(s)
Richard M. Silver, Ravikiran Attota, M R. Bishop, Jay S. Jun, Egon Marx, M P. Davidson, Robert D. Larrabee
Optical methods are often thought to lose their effectiveness as a metrology tool beyond the Rayleigh criterion. However, using advanced modeling methods, the conventional resolution limitations encountered in well-defined edge-to-edge measurements using

Improving the Uncertainty of Photomask Linewidth Measurements

May 1, 2004
Author(s)
J Pedulla, James E. Potzick, Richard M. Silver
The National Institute of Standards and Technology (NIST) is currently developing a photomask linewidth standard (SRM 2059) with a lower expected uncertainty of calibration than the previous NIST standards (SRMs 473, 475, 476). In calibrating these

Uncertainties in Small-Angle Measurement Systems Used to Calibrate Angle Artifacts

May 1, 2004
Author(s)
Jack A. Stone Jr., M Amer, Bryon S. Faust, Jay H. Zimmerman
We have studied a number of effects that can give rise to errors in small-angle measurement systems when they are used to calibrate artifacts such as optical polygons. Of these sources of uncertainty, the most difficult to quantify are errors associated

Photomask Critical Dimension Metrology in the Scanning Electron Microscope

April 7, 2004
Author(s)
Michael T. Postek
Critical Dimension (CD) control begins at the photomask. Therefore, photomask metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 100, 65 and 45 nanometer

UML 2 Activity and Action Models, Part 5: Partitions

April 1, 2004
Author(s)
Conrad E. Bock
This is the fifth in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model. The first article gives an overview of activities and actions, while the next three cover actions
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