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Ndubuisi G. Orji, Theodore V. Vorburger, Joseph Fu, Ronald G. Dixson, C Nguyen, Jayaraman Raja
Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial
Joseph Fu, Ronald G. Dixson, Ndubuisi G. Orji, Theodore V. Vorburger, C Nguyen
Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot. It has been widely used in photography, medical imaging, and computer vision and graphics. For such
Over the past decade modern measurement uncertainty evaluation has evolved from an obscure art practiced at National Measurement Institutes (NMIs) to an increasingly intertwined aspect of industrial metrology. This paper examines the progression of
Theodore D. Doiron, Eric S. Stanfield, Bryon S. Faust, John R. Stoup, Mary Abbott
A number of new or revised services in dimensional metrology are presented. Included are: a lower cost, high accuracy calibration for sphere diameter; reduced uncertainty in roundness calibration; a new instrument for measurement of the thermal expansion
In this paper we will focus on the different metrology techniques used to measure features on photomasks. In view of the above discussion, we will focus on the importance of accurately measuring features and developing traceability. The metrology
SEMATECH and the National Institute of Standards and Technology (NIST) have worked together to implement a Reference Measurement System (RMS) at SEMATECH using a critical-dimension atomic force microscope (CD-AFM). The basic goal of the collaboration is to
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller
Features on photomasks used in the semiconductor industry have steadily decreased in size to fit more elements on a wafer. When the size becomes smaller than the wavelength of the light used in a microscope, simulation becomes an important part of the
We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our
Ronald G. Dixson, Richard A. Allen, William F. Guthrie, Michael W. Cresswell
The use of critical dimension atomic force microscopes (CD-AFMs) in semiconductor manufacturing, both for process control and as a reference metrology tool, is increasing. If the tip width is calibrated consistentlybetween measurements, a CD-AFM can
Instrumentation and metrology are integral to the emerging nanotechnology enterprise, and have been identified by the U. S. National Nanotechnology Initiative (NNI) as one of a number of critical nanotechnology areas. Instrumentation and metrology crosscut
Russell S. Peak, Joshua Lubell, Vijay Srinivasan, Stephen C. Waterbury
One important aspect of product lifecycle management (PLM)is the computer-sensible representation of product information. Over the past 15 years or so, several languages and technologies have emerged that vary in their emphasis and applicability for such
Son H. Bui, Thomas B. Renegar, Theodore V. Vorburger, Jayaraman Raja, Mark C. Malburg
This paper presents the development of an Internet-based surface metrology algorithm testing system. The system includes peer-reviewed surface analysis tools and a surface texture specimen database for parameter evaluation and algorithm verification. The
Ndubuisi G. Orji, Ronald G. Dixson, Joseph Fu, Theodore V. Vorburger
The atomic force microscope (AFM) increasingly being used as a metrology tool in the semiconductor industry where the features measured are at the nanometer level and continue to decrease. Usually the height sensors of the AFM are calibrated using step
The NNI Interagency Workshop on Instrumentation and Metrology for Nanotechnology Grand Challenges was held on January 27-29, 2004 in Gaithersburg, Maryland, and was cosponsored by the National Institute of Standards and Technology (NIST), an agency of the
An active vibration isolation (AVI) system has been designed and implemented for the Molecular Measuring Machine (M3) at the National Institute of Standards and Technology (NIST). NIST is investigating active vibration isolation as an approach to improving
Richard Seugling, David B. Newell, John A. Kramar, Jon R. Pratt
The NIST Electrostatic Force Balance (EFB) compares deadweight and mechanical probe forces to an SI realization of force derived from measurements of the capacitance gradient and voltage in an electronic null balance. In the following abstract, we briefly
Both the standard deviation and the standard deviation of the mean might be used for reporting the statistical variation in the surface calibration reports. In practice, however, if the calibration laboratories or standard agencies could not provide
The composition model in the Unified Modeling Language, version 2, is a major upgrade to the familiar black diamond composition of earlier versions. It supports connections between parts at the same level of decomposition, in addition to the usual part
Son H. Bui, Theodore V. Vorburger, Thomas B. Renegar
This paper presents the development of a virtual surface calibration database for parameter evaluation and algorithm verification. The database runs from a web site at the National Institute of Standards and Technology (NIST), USA. Companies, universities
The NIST Manufacturing Interoperability Program staff has years of experience developing standards, validating solutions, and providing interoperability results in the field of manufacturing. Building on this experience, NIST can: (1) Work with industry to
John A. Dagata, F Perez-murano, C Martin, H Kuramochi, H Yokoyama
A comprehensive analysis of the electrical current passing through the tip-substrate junction during oxidation of silicon by scanning probe microscopy (SPM) is presented. This analysis of experimental results under dc-bias conditions resolves the role of
This article is a brief introduction of NIST's B2B Testbed project. It provides an explanation of the testbed capabilities, what type of participants are the benefactors and joint collaborators of the service, and a url for reading more about the overall