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Manufacturing

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Displaying 1476 - 1500 of 2179

High-resolution Optical Metrology

May 1, 2005
Author(s)
Richard M. Silver, Ravikiran Attota, Michael T. Stocker, M R. Bishop, Lowell P. Howard, Thomas A. Germer, Egon Marx, M P. Davidson, Robert D. Larrabee
Recent advances in optical imaging techniques have unveiled new possibilities for optical metrology and optical-based process control measurements of features in the 65 nm node and beyond. In this paper we discuss methods and applications that combine

Measuring Internal Geometry of Fiber Ferrules

May 1, 2005
Author(s)
Balasubramanian Muralikrishnan, Jack A. Stone Jr., John R. Stoup
The focus of this paper is on the metrology of microstructures. Traditional Coordinate Measuring Machines (CMM) are limited to measuring holes of 300 m diameter. Smaller features and holes require thinner styli & novel probing technologies that can

Micro-Feature Metrology

May 1, 2005
Author(s)
Bala Muralikrishnan, Jack A. Stone Jr., John R. Stoup
This presentation focuses on three aspects of micro-feature metrology novel applications that drive research and commercialization, capabilities and limitations of existing sensors and techniques, and finally a summary of recent research including ongoing

PSL: A Semantic Domain for Flow Models

May 1, 2005
Author(s)
Conrad Bock, Michael Gruninger
Flow models underlie popular programming languages and many graphical behavior specification tools. However, their semantics is typically ambiguous, causing miscommunication between modelers and unexpected implementation results. This article introduces a

Systems Engineering in the Product Lifecycle

May 1, 2005
Author(s)
Conrad E. Bock
This article introduces basic elements of systems engineering that are useful in managing the product lifecycle, as expressed in an extension to the Unified Modeling Language. Models are described for product requirements in textual and computable form

Unbiased Estimation of Linewidth Roughness

May 1, 2005
Author(s)
John S. Villarrubia, B Bunday
Line width roughness (LWR) is usually estimated simply as three standard deviations of the line width. The effect of image noise upon this metric includes a positive nonrandom component. The metric is therefore subject to a bias or ?systematic error? that

The Programs of the Manufacturing Engineering Laboratory 2005

April 8, 2005
Author(s)
Lisa J. Fronczek, Bessmarie A. Young
The National Institute of Standards and Technology s Manufacturing Engineering Laboratory (MEL) strengthens the U.S. economy and improves the quality of life by working with the U.S. manufacturing industry to develop and apply infrastructural technology

Photomask Feature Metrology

April 7, 2005
Author(s)
James E. Potzick
This chapter discusses some general issues with regard to measurement of the size and placement of the features on a photomask.
Since all linewidth and placement measurements derive from the location of a feature's edges, the Chapter starts with a

Comparison of SEM and HRTEM CD-Measurements Extracted From Monocrystalline Tes-Structures Having Feature Linewidths From 40 nm to 240 nm

April 4, 2005
Author(s)
W Tan, Robert Allen, Michael W. Cresswell, Christine E. Murabito, B C. Park, Ronald G. Dixson, William F. Guthrie
CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to facilitate

Magnetic Method to Characterize the Current Densities in a Breaker Arc

April 1, 2005
Author(s)
Nadia Machkour-Deshayes
The purpose of this research was to use magnetic induction measurements from a low voltage electric arc, to reconstruct the arc''s current density. The measurements were made using Hall effect sensors, which were placed close to, but outside the breaking

Optical Flatness Metrology for 300 mm Silicon Wafers

April 1, 2005
Author(s)
Ulf Griesmann, Quandou (. Wang, T D. Raymond
At the National Institute of Standards and Technology (NIST), we are developing two interferometric methods for measuring the thickness variation and flatness of free-standing and chucked silicon wafers with diameters up to 300mm. The eXtremely accurate

Refractometry Using a Helium Standard

April 1, 2005
Author(s)
Jack A. Stone Jr., Alois Stejskal
The refractive index of helium at atmospheric pressure can be calculated from first principles with a very low uncertainty, on the order of 10^-10. Furthermore, the low refractive index of helium puts minimal demands on the pressure and temperature

Scanning Electron Microscope Dimensional Metrology Using a Model-Based Library

April 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

UML 2 Activity and Action Models, Part 6: Structured Activities

April 1, 2005
Author(s)
Conrad E. Bock
This is the sixth in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model [1]. The first article gives an overview of activities and actions [2], while the next four cover

Influence of Focus Variation on Linewidth Measurements

March 3, 2005
Author(s)
M Tanaka, John S. Villarrubia, Andras Vladar
The influence of spatial resolution on line width measurements in the critical dimension scanning electron microscope (CD-SEM) was investigated experimentally. Measurement bias variation and measurement repeatabilities of four edge detection algorithms

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlaton point of the two correlated surface textrues, there is a peak shown at the cross-correaltion curve. It is proposed to generate

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlation point of the two correlated surface textures, there is a peak shown at the cross-correlation curve. It is proposed to

Internet-Based Surface Metrology Algorithm Testing System

January 1, 2005
Author(s)
Mark C. Malburg, Jayaraman Raja, Son H. Bui, Thomas Brian Renegar, Bui Son Brian, Theodore V. Vorburger
Software is an integral part of most measurement systems and it is particularly important in roughness measurement and analysis. Evaluation and assessment of measured roughness profiles must be performed in accordance with standards. Different types of

Issues in Line Edge and Linewidth Roughness Metrology

January 1, 2005
Author(s)
John S. Villarrubia
In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen sampling
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